Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T06:28:46.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Energy Up-Conversion at GaAs-GaInP2 and GaAs-AlGaInP2 Interfaces Caused by Cold Auger Processes

Published online by Cambridge University Press:  10 February 2011

F. A. J. M. Driessen ,
H. M. Cheong  and
A. Mascarehas
F. A. J. M. Driessen
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, [email protected]
H. M. Cheong
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, [email protected]
A. Mascarehas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, [email protected]
Get access

Abstract

Efficient, low-temperature luminescence at energies far above that of the exciting cw-laser is reported at junctions of GaAs-GaInP2 and GaAs-AlxGa1−x.InP2. The signal originates from the high-band gap layers and disappears only if the excitation energy is tuned below the GaAs band gap, as monitored by up-converted photoluminescence excitation spectroscopy. This shows that the non-linear process is induced by the generation of electrons and holes in the GaAs. Furthermore, it is found that the up-conversion is only observed if the (A1)GaInP2 layers are CuPtB long-range ordered. The reason for this is the inherent presence of metastable states in these ordered alloys. It is argued that cold Auger processes cause the nonlinear effect at these type I interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 85
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Light Scattering in Solids I; Introductory concept (second edition), edited by M. Cardona (Topics in Applied Physics [vol.8], Springer, Berlin-Heidelberg-New York)Google Scholar
[2] Gornik, E., Chang, T.Y., Bridges, T.J., Nguyen, V.T., McGee, J.D., and Müller, W., Phys. Rev. Lett. 40, p. 1151 (1978); P. Vagos, P.Boucaud, F.H. Julien, J.-M Lourtioz, and R. Planel, Phys. Rev. Lett. 70, p. 1018 (1993); E.J. Schubert, and K. Ploog, J. Phys. C: Solid State Phys. 18, p. 4549 (1985); M. Potemski, R. Stepniewski, J.C. Maan, G. Martinez, P. Wyder, and B. Etienne, Phys. Rev. Lett. 66, p. 2239 (1991).Google Scholar
[3] Kim, D.S., Ko, H.S., Kim, Y.M., Rhee, S.J., Hong, S.C., Kim, W.S., Chung, J.M., Huhr, S., and Woo, J.C., presented at the 22nd International Symposium on Compound Semiconductors, Korea, september 1995.Google Scholar
[4] Zegrya, G.G. and Kharchenko, V.A., Zh. Eksp. Teor. Fiz. 101, p. 327 (1992) [Soy. Phys. JETP 74, p. 173 (1992)].Google Scholar
[5] Seidel, W., Titkov, A., André, J.P, Voisin, P., and Voos, M., Phys. Rev. Lett. 73, p. 2356 (1994); A. Titkov, W. Seidel, J.P André, P. Voisin, and M. Voos, Solid State Electronics 37, p. 1041 (1994).Google Scholar
[6] Driessen, F.A.J.M., Appl. Phys. Lett. 67, p. 2813 (1995).Google Scholar
[7] DeLong, M.C., Ohlsen, W.D., Viohl, I., Taylor, P.C., and Olson, J.M., J. Appl. Phys. 70, p. 2780 (1991).Google Scholar
[8] van Geelen, A., Thomeer, R.A.J., and Giling, L.J., Appl. Phys. Lett. 66, p. 454 (1995).Google Scholar
[9] Ernst, P., Geng, C., Scholz, F., and Schweizer, H., Phys. Stat. Sol. A in press.Google Scholar
[10] Kobayashi, T., Taira, K., Nakamura, F., and Kawai, H., J. Appl. Phys. 65, p. 4894 (1989); it should be noted that the reported conduction band offsets for the GaAs/GaInP2 junction in the literature scatter between 30 and 390 meV, whereas the valence band offset scatters less and is approximately 250 meV.Google Scholar
[11] Kita, T., Yamashita, K., Nakayama, H., and Nishino, T., in Proceedings of the22nd International Conference on the Physics of Semiconductors, edited by Lockwood, D.J. (World Scientific, Singapore, 1995), p. 1181.Google Scholar
[12] Kondow, M., Kabibayashi, H., Minagawa, S., Inoue, Y., Nishino, T., and Hamakawa, Y., Appl. Phys. Lett. 53, p. 2053 (1988).Google Scholar
[13] Wei, S.-H., Laks, D.B., and Zunger, A., Appl. Phys. Lett. 62, p. 1937 (1993)Google Scholar
[14] Driessen, F.A.J.M., Olsthoorn, S.M., Mascarenhas, A., Wei, S.-H., Bauhuis, G.J, and Giling, L.J., Phys. Rev. B. submitted Google Scholar
[15] Mäider, K.A., and Zunger, A., Appl. Phys. Lett. 64, p. 2882 (1994).Google Scholar
[16] Oh, J.E., Bhattacharya, P.K., Chen, Y.C., Aina, O., and Mattingly, M., J. Electron. Mat. 19, p. 435 (1990).Google Scholar