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Energy Minimization During Epitaxial Grain Growth: Strain VS. Interfacial Energy

Published online by Cambridge University Press:  15 February 2011

J. A. Floro ,
R. Carel  and
C. V. Thompson
J. A. Floro
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
R. Carel
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

We have investigated Epitaxial Grain Growth (EGG) in polycrystalline Ag films on Ni (001) substrates. EGG is driven by minimization of crystallographically anisotropie free energies such as the film/substrate interfacial energy and the film strain. Under some conditions EGG results in the preferred growth of the (111) epitaxial orientations that are predicted to minimize the interfacial energy. However, when Ag films are deposited on Ni (001) at low temperature, EGG experiments consistently find that (111) oriented grains are consumed by grains with (001) orientations predicted to have much higher interface and surface energy. The large elastic anisotropy of Ag can account for this discrepancy. The film thickness and the deposition temperature (relative to the grain growth temperature) determine whether strain energy or interface energy minimization dominates orientation evolution during grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 419
Copyright
Copyright © Materials Research Society 1994

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References

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