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Energy Levels and Capture Cross-Sections of Thermal Donors in Silicon

Published online by Cambridge University Press:  28 February 2011

A. Henry ,
J. L. Pautrat ,
N. Magnea  and
K. Saminadayar
A. Henry
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF/SPh/PSC/ - 85 X - 38041 GRENOBLE CEDEX
J. L. Pautrat
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF/SPh/PSC/ - 85 X - 38041 GRENOBLE CEDEX
N. Magnea
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF/SPh/PSC/ - 85 X - 38041 GRENOBLE CEDEX
K. Saminadayar
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF/SPh/PSC/ - 85 X - 38041 GRENOBLE CEDEX
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Abstract

The electrical properties of thermal donors centers, generated after annealing CZ-silicon at 450° C are carefully evaluated. The energy levels are corrected for the Poole-Frenkel lowering are compared to the ionization energy of the dominant centers revealed by infrared absorption experiments. The capture cross sections are found to be ≈ 2 × 10-12 cm2 for TDI and ≈ 2 × 10-13 cm2 for TD2. Detailed examination of their temperature dependence reveals that they follow a common law σ α T-5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 153
Copyright
Copyright © Materials Research Society 1986

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References

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