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Energy Distribution of Ions in Plasma Etching Reactors

Published online by Cambridge University Press:  28 February 2011

P. Briaud ,
G. Turban  and
B. Grolleau
P. Briaud
Affiliation:
Laboratoire de Physique Corpusculaire, U.A.CNRS 838, Université de Nantes, 2 rue de la Houssinière - 44072 Nantes Cedex, France.
G. Turban
Affiliation:
Laboratoire de Physique Corpusculaire, U.A.CNRS 838, Université de Nantes, 2 rue de la Houssinière - 44072 Nantes Cedex, France.
B. Grolleau
Affiliation:
Laboratoire de Physique Corpusculaire, U.A.CNRS 838, Université de Nantes, 2 rue de la Houssinière - 44072 Nantes Cedex, France.
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Abstract

The energy distributions of the positive ions bombarding the ground electrode in a parallel plate plasma etcher have been measured by means of an electrostatic analyzer after extraction through a 50 μm orifice.Three gases were studied; Ar, CF4 and SF6, with pressures varying from 5 mtorr to 200 mtorr as a function of the discharge frequency.In the low frequency regime (25–125 kHz) the maximum energy of the ions is close to the applied potential (i.e., 500–600 eV).A secondary ion peak is observed and attributed to the secondary electron ionization.SF6 plasma exhibits a behaviour different to that of Ar and CF4 plasmas because of the high electron attachment of the molecule.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 109
Copyright
Copyright © Materials Research Society 1986

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