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Energy Dependence of Transient Enhanced Diffusion and {311} Defect Kinetics

Published online by Cambridge University Press:  17 March 2011

Hugo Saleh ,
Mark E. Law ,
Sushil Bharatan ,
Kevin S. Jones ,
Wish Krishnamoorthy  and
Temel Buyuklimanli
Hugo Saleh
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Mark E. Law
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Sushil Bharatan
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Kevin S. Jones
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Wish Krishnamoorthy
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL 32611
Temel Buyuklimanli
Affiliation:
Evans East, East Windsor, NJ 08520
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Abstract

Boron, a P-type dopant, experiences Transient Enhanced Diffusion (TED) via interstitials. The Boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at 20, 40, 80, and 160 keV were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750°C for 15 to 135 minutes and 800°C for 10 to 30 minutes to observe the diffusion exhibited by the marker layer and to correlate this with the dissolution of {311} type defects. The diffusion enhancement depends strongly on implant energy but the {311} dissolution rate is weakly dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.7
Copyright
Copyright © Materials Research Society 2000

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References

1 Packan, P. A. and Plummer, J. D., Appl. Phys. Lett. 56, 1787 (1990).10.1063/1.103100Google Scholar
2 Packan, P. A., Ph.D. Thesis, Stanford University, 1991.Google Scholar
3 Lim, D. R., Rafferty, C. S., and Klemens, F. P., Appl. Phys. Lett. 67, 2302–2304 (1995).10.1063/1.115133Google Scholar
4 Giles, M. D., J. Electrochem. Soc. 138, 1160–1165 (1991).10.1149/1.2085734Google Scholar
5 Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., and Poate, J. M., Appl. Phys. Lett. 65, 2305–2307 (1994).10.1063/1.112725Google Scholar
6 Agarwal, A., Haynes, T. E., Eaglesham, D. J., Gossmann, H.-J., Johnson, D. C., Poate, J. M., and Erokhin, Y. E., Appl. Phys. Lett. 70, 3332 (1997).10.1063/1.119161Google Scholar
7 Moller, K., Jones, K. S., and Law, M. E., A.P.L. 72 (1998).Google Scholar
8 Takeda, S. and Kohyama, M., Institute of Physics Conference Series, 1993, p. 33.Google Scholar
9 Cowern, N.E.B., Jaraiz, M., Cristiano, F., Claverie, A., and Mannino, G., IEDM Technical Digest, 333-335 (1999).Google Scholar