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Energy Dependence of Amorphization of Ge by Kr Ions

Published online by Cambridge University Press:  25 February 2011

R. C. Birtcher
R. C. Birtcher*
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, EL 60439
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Abstract

Thin Ge specimens have been irradiated with Kr ions of different energies, and the dose required for complete amorphization determined by in situ transmission electron microscopy. Because Ge is directly amorphized by a single energetic Kr ion, onset of amorphization was detected after the lowesi ion doses. The Kr dose required for complete amorphization was found to increase linearly with ion energy over the range 0.5 MeV to 3.5 MeV. With the assumption that the defect density required for amorphization is independent of ion energy, the number of defects produced in a thin specimen by each ion decreases with increasing energy as the reciprocal of the incident ion energy. TRIM calculations indicate that there is a slight decrease in the amount of damage required with increasingion energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 129
Copyright
Copyright © Materials Research Society 1993

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References

[1] Appleton, B. R., Holland, O. W., Poker, D. B., Narayan, J. and Fathy, D., Nucl. Instrum. Methods B7/8, 639 (1985).Google Scholar
[2] Wang, L. M. and Birtcher, R. C., Appl Phys. Lett. 55, 2494 (1989).CrossRefGoogle Scholar
[3] Wang, L. M. and Birtcher, R. C., Phil. Mag. A, 1209, (1991).Google Scholar
[4] Taylor, A., Allen, C. W. and Ryan, E. A., Nucl. Instrum. Methods B 24/25, 598 (1987).Google Scholar
[5] Kestel, B. J., Ultramicroscopy 9, 379 (1982).Google Scholar
[6] Corbett, J. W., Electron Radiation Damage in Semiconductors and Metals (Academic, New York, 1966), p. 134.Google Scholar
[7] Howe, L. M. and Rainville, M. H., Nucl. Instrum. Methods B 19/20, 61 (1987).Google Scholar
[8] Ziegler, J. J. F., Biersack, J. P. and Littlemark, U., 1985, The Stopping Range of Ions in Solids, Pergamon Press, New York.Google Scholar