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Emission Inhomogeneity in InAs Quantum Dot DWELL Structures

Published online by Cambridge University Press:  01 February 2011

Alejandro Vivas Hernández ,
Gerorgiy Polupan ,
Eric Velazquez ,
Ingri J. Guerrero Moreno  and
L. Scherbyna
Alejandro Vivas Hernández
Affiliation:
[email protected], ESIME-National Polytechnic Institute, Materials Science, México D.F., Mexico
Gerorgiy Polupan
Affiliation:
[email protected], ESIME-National Polytechnic Institute, Materials Science, México D.F., Mexico
Eric Velazquez
Affiliation:
[email protected], ESIME-National Polytechnic Institute, Materials Science, México D.F., Mexico
Ingri J. Guerrero Moreno
Affiliation:
[email protected], UPIITA-National Polytechnic Institute, México D.F., Mexico
L. Scherbyna
Affiliation:
[email protected], National Technical University –“KPI” of Ukraine, Kyiv, Ukraine
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Abstract

The photoluminescence spectra and its homogeneity for InAs quantum dots (QDs) embedded into In0.15Ga0.85As/GaAs quantum well (QW) structures with QDs grown at different temperatures (470-535°C) have been investigated at 300 K. Photoluminescence (PL) spectra along the scanning line crossed the wafers were measured at 300 K in a set of points on the QD structures under the excitation of the 804 nm line of a solid state IR laser at an excitation power density of 100 W/cm2. In QD structures with InAs QDs grown at 470°C the low integrated PL intensity, the high dispersion of QD sizes in ensemble and, as a result, the large value of FWHM (50-70meV), but the low dispersion of QD ensemble parameters along the line crossed the structures have been detected. In QD structures grown at high temperatures 490-535 °C the high integrated PL intensity, the low dispersion of QD sizes in ensemble and, as a result, less values of FWHM, but the essential dispersion of QD ensemble parameters along the line crossed the structures have been revealed. The reasons of these types of PL nonhomogeneity have been discussed.

Keywords

photoemissionnanostructureoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1257: Symposium O – Multifunctional Nanoparticle Systems-Coupled Behavior and Applications , 2010 , 1257-O03-34
Copyright
Copyright © Materials Research Society 2010

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References

1 Bimberg, D. Grundman, M. Ledentsov, N.N. Quantum Dot Heterostructures, Wiley & Sons, 2001, p. 328.Google Scholar
2 Grundmann, M. (Ed.), Nano-Optoelectronics, Springer, 2002, p. 442.Google Scholar
3 Torchynska, T.V. Espinola, J.L. Casas, Eliseev, P.G. Stintz, A. Malloy, K.J. Sierra, R. Pena, Phys. Status Solidi, (a) 195, 209 (2003).Google Scholar
4 Liu, G.T. Stintz, A. i, H.L. Malloy, K.J. Lester, L.F. Electron. Lett. 35, 1163 (1999).Google Scholar
5 Ustinov, V.M. Maleev, N.A. Shukov, A.E. Kovsh, A.R. A.YEgorov, u. Lunev, A.V. Volovik, B.V., Krestnikov, I.L. YMusikhin, u.G. Bert, N.A. Kopev, P.S. ZAlferov, h.I. Ledentsov, N.N., Bimberg, D. Appl. Phys. Lett. 74, 2815 (1999).Google Scholar
6 Eah, S.-K. Jhe, W. Arakawa, Y. Appl. Phys. Lett. 80, 2779 (2002).Google Scholar
7 Dybiec, M. Ostapenko, S. Torchynska, T.V. Losada, E. Velasquez, Appl. Phys. Lett. 84 (25), 5165 (2004).Google Scholar
8 Dybiec, M. Ostapenko, S. Torchynska, T.V. Lozada, E. Velazquez, Eliseev, P.G. Stintz, A. Malloy, K.J. Phys. Stat. Solid. (C) 2 (8), 2951 (2005).Google Scholar
9 Torchynska, T.V. Dybiec, M. Ostapenko, S. Phys. Rev. B 72, 195341 (2005).Google Scholar
10 Jacobs, S.E.J. Kemerink, M. Koenroad, P.M. Hopkinson, M. Salimink, H.W.M. Walter, J.H. Appl. Phys. Lett. 83 (2003) 290.Google Scholar
11 Torchynska, T.V. Espinola, J.L. Casas, Losada, E. Velasquez, Eliseev, P.G. Stintz, A. Malloy, K.J., Sierra, R. Pena, Surf. Scien. 532–535, 848 (2003).Google Scholar
12 Torchynska, T.V. Espinola, J.L. Casas, Borkovska, L.V. Ostapenko, S. Dybiec, M. Polupan, O., Korsunska, N.O. Eliseev, P.G. Stintz, A. Malloy, K.J. J. Appl. Phys. 101 (2), 024323 (2007).Google Scholar
13 Stintz, A. Liu, G. T. Gray, L. Spillers, R. Delgado, S. M. Malloy, K. J. J. Vac. Sci. Tech. B. 18(i3), 1496 (2000).Google Scholar
14 Torchynska, T. V. J. Appl. Phys. 104 (7), 074315 (2008).Google Scholar
15 Torchynska, T.V. Lozada, E. Velazquez, Espinola, J.L. Casas, J. Vac. Sci. & Tech. 27(2), 919 (2009).Google Scholar
16 Torchynska, T.V. Superlattice and Microstructure 45, 349 (2009).Google Scholar
17 Polupan, G. Hernandez, A. Vivas, Shcherbyna, Ye. S. Superlattice and Microstructure 47, 484 (2010).Google Scholar
18 Dybiec, M. Borkovska, L. Ostapenko, S. Torchynska, T.V. Espinola, J.L. Casas, Stintz, A. Malloy, K.J. Appl. Surf. Scien. 252 (15), 5542 (2006).Google Scholar
19 Asryan, L.V. Suris, R.A. Semicond. Sci. Technol. 11, 554 (1996).Google Scholar