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Emission Characteristics of GaN-Based EL Device with AC Operation

Published online by Cambridge University Press:  17 March 2011

Tohru Honda  and
Hideo Kawanishi
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Abstract

GaN-based electroluminescence devices (ELDs) were fabricated using a GaN powder as an emission layer. The electroluminescence spectra of the GaN ELDs under AC operation were observed at room temperature. The emission characteristics of GaN-based ELDs were studied to compare the EL spectra and the cathodoluminescence (CL) spectra. It was clarified that the EL spectra were similar to the CL spectra of a GaN emission layer. The emission peaks in the EL spectra were shifted toward the high-energy side with increasing operation frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.13
Copyright
Copyright © Materials Research Society 2001

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References

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