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Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

Published online by Cambridge University Press:  19 November 2013

R. Cisneros Tamayo ,
I.J. Gerrero Moreno ,
A. Vivas Hernandez ,
J.L. Casas Espinola  and
L. Shcherbyna
R. Cisneros Tamayo
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México
I.J. Gerrero Moreno
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México
A. Vivas Hernandez
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México
J.L. Casas Espinola
Affiliation:
ESFM– Instituto Politécnico Nacional, México D. F. 07738, México
L. Shcherbyna
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kiev, Ukraine
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Abstract

The photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Keywords

luminescenceInAs quantum dotsXRD
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 43 - 48
Copyright
Copyright © Materials Research Society 2013 

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