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Eluding Metal Contamination in CMOS Front-End Fabrication by Nanocrystal Formation Process

Published online by Cambridge University Press:  15 March 2011

Zengtao Liu ,
Chungho Lee ,
Gen Pei ,
Venkat Narayanan  and
Edwin C. Kan
Zengtao Liu
Affiliation:
School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850
Chungho Lee
Affiliation:
School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850
Gen Pei
Affiliation:
School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850
Venkat Narayanan
Affiliation:
School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850
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Abstract

A technique to form metal nanocrystals on silicon or thin SiO2 film by Rapid Thermal Annealing (RTA) of thin metal film is developed and integrated into standard CMOS processing to make EEPROM devices and improve metal-semiconductor contact resistance. I-V and C-V measurements are carried out on MOSFETs and MOS capacitors containing Au, Ag, Pt, and Si nanocrystals as floating gate for universal mobility and minority carrier lifetime extraction. Mobility around 300 cm2/V-sec and minority carrier lifetime within 0.02 ∼ 0.1 μsec are observed for all cases including the control samples that do not go through the metal nanocrystal formation process, which suggests that the substrate is virtually free from metal contamination. Using this technique, thicker metal film can potentially be achieved as well by stitching thin metal layers on top of the nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A5.3
Copyright
Copyright © Materials Research Society 2002

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