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Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator Films

Published online by Cambridge University Press:  28 February 2011

M. W. Geis ,
C. K. Chen ,
Henry I. Smith ,
P. M. Nitishin ,
B-Y. Tsaur  and
R. W. Mountain
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
P. M. Nitishin
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Since the introduction of zone-melting recrystallization (ZMR)for silicon-on-insulator (SOI) films, subboundaries (low-angle grain boundaries) have been the major crystalline defects in recrystallized films. By using an improved ZMR procedure, subboundaries have been eliminated over large areas. The improvements include the use of 1-µm-thick polycrystalline-Si films deposited on 2-µm-thick thermal SiO2 film (instead of 0.5-µm-thick Si and SiO2 films), a new encapsulation technique, and improved control of the thermal gradient during ZMR. Recrystallized SOI films without subboundaries contain isolated dislocations with densities <2 × 106 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 39
Copyright
Copyright © Materials Research Society 1986

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References

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