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Electrostatic Energy Induced 45° Rotation in Heteroepitaxial KNbO3 Thin Films on (001) MgO

Published online by Cambridge University Press:  25 February 2011

Shang Hsien Rou ,
Thomas M. Graettinger ,
Orlando Auciello  and
Angus I. Kingon
Shang Hsien Rou
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC
Thomas M. Graettinger
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC
Orlando Auciello
Affiliation:
Also, Microelectronics Center of N. C., RTP, NC
Angus I. Kingon
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC
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Abstract

Perovskite KNbO3 thin films were epitaxially grown on (001) MgO by sequential deposition of ultrathin layer (<10Å) single component (KOx and NbOy) species. By engineering the first overlayer species from NbOy to KOx, on (001) MgO, a 45° in-plane rotation of the epitaxial KNbO3 films was observed. This 45° rotation is a result of minimization of the electrostatic energy within the KNbO3/MgO interface. Transmission electron microscopy was employed to characterize these epitaxial KNbO3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 65
Copyright
Copyright © Materials Research Society 1991

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References

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