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Electrophotographic Properties of n+-a-Si:H/a-Si:H/a-Sic:H Heterostructures

Published online by Cambridge University Press:  28 February 2011

S. M. Paasche  and
G. H. Bauer
S. M. Paasche
Affiliation:
Institut f. Phys. Elektronik, University of Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, Federal Republic of Germany
G. H. Bauer
Affiliation:
Institut f. Phys. Elektronik, University of Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, Federal Republic of Germany
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Abstract

For negative charging electrophotographic applications a three layer heterostructure (Al/n+-a-Si:H/a-Si:H/a-SiC:H) has been investigated. To some extent a separation of the function of charge storage by a high band gap amorphous silicon carbon alloy and of that of photogeneration of carriers and of sufficient photosensitivity in an intrinsic amorphous silicon film has been achieved. Due to a low injection of electrons from the surface into the a-SiC:H and a small thermal generation rate of carriers within the a- Si:H film, the dark decay of the negative surface potential is dominated by space charge limited currents of holes. Thus a considerable difference in surface potential for negative and positive charging occurs, which is related to the difference in electron and hole mobility in a-Si:H. Since there is no remarkable barrier at the heterointerface a-Si:H/a-SiC:H an excellent injection of photogenerated holes into the a-SiC:H can be provided.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 671
Copyright
Copyright © Materials Research Society 1986

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References

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