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Electro-Optical Properties of Na0.5K0.5NbO3Films on Si by Free-Space Coupling Technique

Published online by Cambridge University Press:  15 March 2011

Alexander M. Grishin  and
Sergey I. Khartsev
Alexander M. Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
Sergey I. Khartsev
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, SWEDEN
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Abstract

We report electro-optic performance of highly polar axis oriented Na0.5K0.5NbO3(NKN) films grown directly on Pt(100nm)/Ti(10nm)/SiO2/Si(001) substrates by rf-magnetron sputtering. Semitransparent gold electrodes (diameter Ø= 2 mm) were deposited ontop the NKN films by a thermal evaporation through the contact mask. Processing parameters have been specially optimized to obtain “electrosoft” NKN films with a non-linear fatigue-free P-E characteristics: low remnant Pr = 3.6 μC/cm2 and high induced polarization P = 26 μC/cm2 @ 522 kV/cm, and the coercive field Ec= 39 kV/cm. Electro-optical characterization of NKN/Pt/Si films has been performed using waveguide refractometry: a free-space coupling of a light beam into the thin-film waveguide modes. Intensity of TM- andTE-polarized light of 670 nm laser diode reflected from the free surface of NKN film and Au-cladding NKN/Pt/Si waveguide was recorded at zero and 30 V (100 kV/cm) bias electric field. Extraordinary and ordinary refractive indices as well as electro-optic coefficient have been determined by fitting these experimental data to the Fresnel formulas. Applying 160 V (530 kV/cm) across the parallel plate NKN capacitor (Ø= 2 mm, thickness 3 μm), modulation of the reflected light as high as 40% was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 817: Symposium L – New Materials for Microphotonics , 2004 , L6.17
Copyright
Copyright © Materials Research Society 2004

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References

1. Schmidt, R.V., Kaminow, I.P., Appl. Phys. Lett. 25, 458 (1974).Google Scholar
2. Thylen, L., J. Lightwave Technology 6, 847 (1988).Google Scholar
3. Wang, X., Helmersson, U., Olafsson, S., Rudner, S., Wernlund, L.-D., Gevorgian, S., Appl. Phys. Lett. 73, 927 (1998).Google Scholar
4. Wang, X., Olafsson, S., Madsen, L.D., Rudner, S., Ivanov, I.P., Grishin, A.M., Helmersson, U., J. Materials Research 17, 1183–1191 (2002).Google Scholar
5. Blomqvist, M., Koh, J.-H., Khartsev, S. I., Grishin, A. M., Andréasson, J., Appl. Phys. Lett. 81, 337 (2002).Google Scholar
6. Cho, C.-R., Grishin, A.M., Appl. Phys. Lett. 75, 268 (1999).Google Scholar
7. Cho, C.-R., Katardjiev, I., Grishin, M.A., Grishin, A.M., Appl. Phys. Lett. 80, 3171 (2002).Google Scholar
8. Cho, C.-R., Grishin, A.M., J. Appl. Phys. 87, 4439 (2000).Google Scholar
9. Blomqvist, M., Khartsev, S.I., Grishin, A.M., Petraru, A., Buchal, Ch., Appl. Phys. Lett. 82, 439 (2003).Google Scholar
10. Potter, B.G. Jr., Sinclair, M.B., Dimos, D., Appl. Phys. Lett. 63, 2180 (1993).Google Scholar