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Electronic Transport Properties of ZnSe Layers on GaAs

Published online by Cambridge University Press:  28 February 2011

T. Marshall ,
S. Colak ,
H. Van Houten ,
J. Petruzzello ,
B. Greenberg  and
D. Cammack
T. Marshall
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
S. Colak
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
H. Van Houten
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
B. Greenberg
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
D. Cammack
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, NY 10510
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Abstract

The electronic transport properties of ZnSe layers grown by MBE on GaAs sub- strates are studied by small-signal ac admittance, dc current-voltage, and Hall effect measurements. This work is supplemented by a study of TEM and x-ray rocking curve data. We find that the transport characteristics are strongly affected by the proper- ties of the ZnSe/GaAs interface. From the dc and ac measurements, we determine the total barrier height at the interface of thick (1-6 µm) ZnSe layers on n+-GaAs, and find that it is in general voltage dependent. While some samples are found to have a very high peak mobility (> 10,000cm2 /Vsec), an anomalous reduction in the mobility in a large fraction of the samples is found, and attributed to the presence of non- uniform space charge regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 441
Copyright
Copyright © Materials Research Society 1989

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