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Electronic Transport in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

M. Silver ,
D. Adler ,
M. P. Shaw ,
V. Cannella  and
J. McGill
M. Silver
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
D. Adler
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
M. P. Shaw
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit. MI 48202
V. Cannella
Affiliation:
Ovonic Display Systems, Troy, MI 48084
J. McGill
Affiliation:
Ovonic Display Systems, Troy, MI 48084
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Abstract

The puzzles regarding the magnitude of the free electron mobility in hydrogenated amorphous silicon are examined. It is suggested that highlevel double injection produces a metastable increase in the carrier mobility by neutralizing positively and negatively charged defect states thereby eliminating long-range potential fluctuations. Since these defect states cannot be neutralized under low-level or single injection, they both contribute to the modulation of the conduction band and increase the freecarrier scattering. If the latter is the predominant scattering mechanism, the neutralization of charged defects directly leads to a mobility increase under double-injection conditions. We discuss the various implications of this model, and present recent experimental results in agreement with these ideas.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 119
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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