Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:39:25.032Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Theory of Mn - Alloyed Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

H. Ehrenreich ,
K. C. Hass ,
B. E. Larson  and
N. F. Johnson
H. Ehrenreich
Affiliation:
Harvard University, Division of Applied Sciences and Department of Physics, Cambridge, Massachusetts 02138
K. C. Hass
Affiliation:
Also at MIT, Dept. of Physics, Cambridge, MA 02139
B. E. Larson
Affiliation:
Harvard University, Division of Applied Sciences and Department of Physics, Cambridge, Massachusetts 02138
N. F. Johnson
Affiliation:
Harvard University, Division of Applied Sciences and Department of Physics, Cambridge, Massachusetts 02138
Get access

Abstract

Recent calculations of the electronic structure and magnetic interactions in Mn - alloyed II-VI diluted magnetic semiconductors (DMS) are summarized. Detailed band structure results are obtained using an empirical tight-binding, coherent potential approximation approach with input from experiment and local spin density band calculations. The dominant magnetic interactions in these systems result from hybridization between spin-split Mn d states and sp valence bands. Superexchange between Mn moments is well described by a simple three-level model which yields accurate Mn - Mn exchange constants for a variety of II-VI DMS as well as the rocksalt insulators MnO and α-MnS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 187
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Brandt, N.B. and Moschalkov, V.V., Adv. in Phys. 33, 193 (1984); J.K. Furdyna, J. Appl. Phys. 53, 637 (1982) and references therein.CrossRefGoogle Scholar
2. Kossut, J., Phys. Stat. Sol. (b) 78, 537 (1976).CrossRefGoogle Scholar
3. Oseroff, S.B. and Keesom, P.H., to be published in Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer (Academic, New York).Google Scholar
4. Hubbard, J., Proc. Roy. Soc. (London) A 281 401 (1964).Google Scholar
5. Barth, U. Von and Hedin, L., J. Phys. C 5, 1629 (1972).Google Scholar
6. Williams, A.R. and Barth, U. Von, in The Inhomogeneous Electron Gas, ed. by Lundqvist, S. and March, N.H. (Plenum, New York 1983).Google Scholar
7. Larson, B.E., Hass, K.C., Ehrenreich, H. and Carlsson, A.E., Solid State Commun. 56, 347 (1985).Google Scholar
8. Hass, K.C., Larson, B.E., Ehrenreich, H. and Carlsson, A.E., J. Mag. Magn. Mat. 54–57, 1283 (1986).Google Scholar
9. Larson, B.E., Hass, K.C., Ehrenreich, H. and Carlsson, A.E. (unpublished).Google Scholar
10. Wei, S.H. and Zunger, A., Phys. Rev. Lett. 56, 2391 (1986) and unpublished.Google Scholar
11. Harrison, W.A., Electronic Structure and the Properties of Solids (Freeman, 196 San Francisco, 1980).Google Scholar
12. Ehrenreich, H. and Schwartz, L.M., in Solid State Physics, ed. by Ehrenreich, H., Seitz, F. and Turnbull, D. (Academic, New York, 1976) Vol.31, p. 149.Google Scholar
13. Hass, K.C. and Ehrenreich, H., J. Vac. Sci. Technol. A 1, 1678 (1983).Google Scholar
14. Hass, K.C., Ehrenreich, H. and Velický, B., Phys. Rev. B 27, 1088 (1983).CrossRefGoogle Scholar
15. Moore, C.E., Atomic Energy Levels (U.S. G.P.O., Washington, D.C., 1949); F. Herman and S. Skillman, Atomic Structure Calculations (Prentice-Hall, Englewood Cliffs, 1963).Google Scholar
16. Khoi, N.T. and Gaj, J.A., Phys. Stat. Sol. (b) 83, K133 (1977); R. Brun de Re, T. Donofro, J. Avon, J. Magid and J.C. Wooley, Nuovo Cim. 2D, 1911 (1983).CrossRefGoogle Scholar
17. Carlsson, A.E., Phys. Rev. B 31, 5178 (1985).CrossRefGoogle Scholar
18. Taniguchi, M., et. al., Phys. Rev. B 33, 1206 (1986); A. Franciosi, et. al., Proc. of the 18 th Int. Conf. on the Phys. of Semicond., Stockholm, 1986 and references therein.Google Scholar
19. Lautenschlager, P., Logothetidis, S., Viña, L. and Cardona, M., Phys. Rev. B 32, 3811 (1985).Google Scholar
20. Kendelewicz, T., J. Phys. C 14, 6407 (1981).Google Scholar
21. Ehrenreich, H., Hass, K.C., Johnson, N.F., Larson, B.E. and Lempert, R.J., Proc. of the 18th Int. Conf. on the Phys. of Semicond., Stockholm, 1986.Google Scholar
22. Velický, B., Mašek, J., Cháb, V. and Orlowski, B.A., Acta Physica Polonica A69, 1059 (1986).Google Scholar
23. Heiman, D., Shapira, Y. and Foner, S., Solid State Commun. 51, 603 (1984) and references therein.Google Scholar
24. Bhattacharjee, A.K., Fishman, G. and Coqblin, B., Physica 117&118B, 449 (1983).Google Scholar
25. Schrieffer, J.R. and Wolff, P.A., Phys. Rev. 149, 491 (1966).Google Scholar
26. Larson, B.E., Hass, K.C. and Aggarwal, R.L., Phys. Rev. B 33, 1789 (1986); Y. Shapira, S. Foner, D.H. Ridgley, K. Dwight and A. Wold, Phys. Rev. B 30, 4021 (1984); L.M. Corliss, J.M. Hastings, S.M. Shapiro, Y. Shapira and P. Becla, Phys. Rev. B33, 608 (1986).CrossRefGoogle Scholar
27. Anderson, P.W., in Solid State Physics, ed. by Seitz, F. and Turnbull, D. (Academic, New York, 1963) Vol.14, p. 79; B. Koiller and L.M. Falicov, J. Phys. C 8, 695 (1975).Google Scholar
28. Bloembergen, N. and Rowland, T.J., Phys. Rev. B 97, 1697 (1955).Google Scholar
29. Bastard, G. and Lewiner, C., Phys. Rev. B 20, 4265 (1979); V.C. Lee and L. Liu, Phys. Rev. B 29, 2125 (1984).Google Scholar
30. Oguchi, T., Terakura, K. and Williams, A.R., Phys. Rev. B 28, 6443 (1983).CrossRefGoogle Scholar
31. Smart, J.S., in Magnetism, ed. by Rado, G.T. and Suhl, H. (Academic, New York, 1963) Vol.3, p. 63.Google Scholar