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Electronic Structure of Two Sulphur-Related Bound Excitions in Silicon Studied by Optical Detection of Magnetic Resonance

Published online by Cambridge University Press:  25 February 2011

W.M. Chen ,
A. Henry ,
E. Janzén ,
B. Monemar  and
M.L.W. Thewalt
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-58l 83 Linköping, SWEDEN
M.L.W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, CANADA V5A 1S6
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Abstract

We report an investigation on the electronic structure of two bound exciton (BE) systems from a complex defect in S-doped Si, by optical detection of magnetic resonance (ODMR). A spin-triplet (S=1) is identified to be the lowest electronic state of the BE's, which gives rise to deep photoluminescence (PL) emissions when recombining. A weak anisotropy of the magnetic interaction of the BE’s (not possible to resolve in Zeeman data) is revealed, which leads directly to the determination of the symmetry for the excited state of the defect. A S-related complex model is suggested as the identity of the defect. A critical test of two possible metastable configurations of the constituents of a single defect is undertaken.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 303
Copyright
Copyright © Materials Research Society 1990

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References

1 Brown, T.G. and Hall, D.G., Appl. Phys. Lett. 49, 245 (1986).Google Scholar
2 Brown, T.G., Bradfield, P.L. and Hall, D.G., Appl. Phys. Lett. 51, 1585 (1987).Google Scholar
3 Bradfield, P.L., Brown, T.G. and Hall, D.G., Appl. Phys. Lett. 55, 100 (1989).Google Scholar
4 Thewalt, M.L.W., Nissen, M., Beckett, D.J.S. and Charbonneau, S., in Shallow Impurities in Semiconductors, edited by Monemar, B. (Inst. of Phys. Conf. Series 95, Bristol, 1989) pp. 505–514.Google Scholar
5 Singh, M., Lightowlers, E.C. and Davies, G., presented in the E-MRS Spring Meeting, Strasbourg, France, 1989 (unpublished).Google Scholar
6 Godlewski, M., Weman, H., Wang, F.P., Monemar, B., Chen, W.M. and Zhao, Q.X., in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J. and Davies, G. (Mat. Res. Soc. Symp. Proc. 104, Pittsburgh, PA, 1988) pp.117–120.Google Scholar
7 Chen, W.M. and Monemar, B., these proceedings.Google Scholar
8 Dean, P.J., in Deep Centers in Semiconductors, ed. Pantelides, S.T. (Gordon and Breach, New York, 1986) Chap.4.Google Scholar
9 Cavenett, B.C., Adv. in Physics 30, 475 (1981).Google Scholar
10 Monemar, B., Lindefelt, U. and Chen, W.M., Physica 146B, 256 (1987).Google Scholar