Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T01:29:16.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic structure of the diluted magnetic semiconductors Pb1−xSnxTe:Yb

Published online by Cambridge University Press:  15 March 2011

Evgenii Skipetrov ,
Elena Zvereva ,
Olga Volkova ,
Alexander Golubev  and
Vasiliy Slyn'ko
Evgenii Skipetrov
Affiliation:
Low Temperature Physics Department, Faculty of Physics, Moscow State University, Leninskie Gory, 119992 Moscow, RUSSIA
Elena Zvereva
Affiliation:
Low Temperature Physics Department, Faculty of Physics, Moscow State University, Leninskie Gory, 119992 Moscow, RUSSIA
Olga Volkova
Affiliation:
Faculty of Materials Science, Moscow State University, Leninskie Gory, 119992 Moscow, RUSSIA
Alexander Golubev
Affiliation:
Faculty of Materials Science, Moscow State University, Leninskie Gory, 119992 Moscow, RUSSIA
Vasiliy Slyn'ko
Affiliation:
Institute of Material Science Problems, Chernovtsy, 274001, UKRAINE
Get access

Abstract

The galvanomagnetic effects in the new diluted magnetic semiconductors Pb1−xSnxTe:Yb were studied to determine the parameters of the electronic structure and to elucidate its influence on the magnetic properties. It was found that the temperature dependencies of the resistivity ρ and the Hall coefficient RH have a “metallic” character, however the RH changes in anomalous manner: its value increases more than by order of magnitude and then passes through maximum with increasing the temperature. Upon an increase of the ytterbium concentration the hole concentration decreases by more than order of magnitude. The results were explained assuming a formation of deep ytterbium-induced defect level in the valence band of the alloys, which moves up to its top with increasing the ytterbium concentration and pins the Fermi level within the valence band. The energy position of the Fermi level was calculated in the frame of two-band dispersion law and used to determine the position of Yb level in the alloys. The diagram of the charge carrier energy spectrum under varying the alloy composition was built.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G5.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Volkov, B.A., Ryabova, L.I., Khokhlov, D.R., Physics-Uspekhi 45, 819 (2002).Google Scholar
2. Lead Chalcogenides: Physics and Applications ed. by Khokhlov, D. R. in Optoelectronic properties of semiconductors and superlattices 18 (Taylor and Francies, New York, London, 2003).Google Scholar
3. Story, T., Acta Phys. Pol. A 94, 189 (1998).Google Scholar
4. Dugaev, V.K., Litvinov, V.I., Lusakowski, A., Phys. Rev. B 59, 15190 (1999).Google Scholar
5. Skipetrov, E.P., Zvereva, E.A., Skipetrova, L.A., Kovalev, B.B., Volkova, O.S., Golubev, A.V., and Slyn'ko, E.I., phys. stat. sol. (b) 241, 1100 (2004).Google Scholar
6. Skipetrov, E.P., Chernova, N.A. and Slyn'ko, E.I., Phys. Rev. B 66, 085204 (2002).Google Scholar
7. Skipetrov, E.P., Chernova, N.A., Slyn'ko, E.I. and Vygranenko, Yu.K., Phys. Rev. B 59, 12928 (1999).Google Scholar
8. Slyn'ko, V.E., Visnyk Lviv Univ., Ser. Physic. 34, 291 (2001).Google Scholar
9. Dornhaus, R., Nimtz, G. and Schlicht, B., Narrow-Gap Semiconductors (Springer-Verlag, Berlin, 1983) pp.45–49.Google Scholar
10. Kane, E. O., J. Phys. Chem. Sol. 1, 249 (1957).Google Scholar
11. Akimov, B.A., Vadhva, R.S., Chudinov, S.M., Sov.-Phys. Semicond. 12, 1927 (1978).Google Scholar