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Electronic Structure Of Silicide-Silicon Interfaces

Published online by Cambridge University Press:  26 February 2011

O. Bisi
O. Bisi*
Affiliation:
Dept. of Physics, University of Modena, 41100 Modena, Italy
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Abstract

Significant understanding of the processes occurring at the interface between transition metal ultrathin overlayers and silicon has been achieved in recent years. In general these interfaces are highly reactive and the formation of an interfacial suicide compound takes place. The reaction at the near-noble metal-silicon interface can occur even at liquid nitrogen temperature. Furthermore the reaction products can give rise to epitaxial interfaces. How can the covai ent bonds in silicon be broken at such a low temperature and eventually give rise to an epitaxial interface are intriguing questions, which cannot be answered without a full understanding of the electronic and atomic processes involved in the interface reaction.

Theoretical investigation‘through band structure calculations allows us to understand the modifications of the suicide electronic states in the interface region. Assuming various interface geometries (e.g. epitaxial growth or interstitial interdiffusion) the effect of different atomic processes on the electronic properties is analysed and available photoemission and Auger spectroscopie experimental informations are interpreted. The role of both electronic states and atomic processes in determining the interface physical properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 13
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Tu, K.N. and Mayer, J.W., in Thin Film Reactions and Diffusion, edited by Poate, J.M., Tu, K.N. and Mayer, J.W. (Wiley, New York, 1978), p. 359.Google Scholar
2. Murarka, S.P., Suicides for VLSI Applications, (Academic Press, New York, 1983).Google Scholar
3. Rubloff, G.W., in Festkorperprobleme (Advances in Solid State Physics), Vol. 23, edited by Grosse, P. (Vieweg, Braunschweig, 1983), p. 179.Google Scholar
4. Calandra, C., Bisi, O. and Ottaviani, G., Surf. Sci. Reports 4, 271 (1984).Google Scholar
5. Tu, K.N., Appl. Phys. Lett. 27, 221 (1975).Google Scholar
6. Cheung, N.W. and Mayer, J.W., Phys. Rev. Lett. 46, 671 (1981).Google Scholar
7. Grunthaner, P.J., Grunthaner, F.J., Madhukar, A. and Mayer, J.W., J. Vac. Sci. Technol. 19, 649 (1981).Google Scholar
8. Chang, Y.J. and Erskine, J.L., Phys. Rev. B 26, 4766 (1982).Google Scholar
9. Comin, F., Rowe, J.E. and Citrin, P.H., Phys. Rev. Lett. 51, 2402 (1983).Google Scholar
10. Hamann, D.R. and Mattheiss, L.F., Phys. Rev. Lett. 54, 2517 (1985).Google Scholar
11. van Loenen, E.J., Frenken, J.W.M. and van der Veen, J.F., Appl. Phys. Lett. 45, 41 (1984).Google Scholar
12. Abbati, I., Braicovich, L., De Michelis, B., del Pennino, U. and Valeri, S., Solid State Commun. 43, 199 (1982).Google Scholar
13. Bisi, O., Chiao, L.W. and Tu, K.N., Phys. Rev. B 30, 4664 (1984).Google Scholar
14. Freeouf, J.L., Rubloff, G.W., Ho, P.S. and Kuan, T.S., Phys. Rev. Lett. 43, 1836 (1979).Google Scholar
15. Bisi, O. and Tu, K.N., Phys. Rev. Lett. 52, 1633 (1984).Google Scholar
16. Braicovich, L., Surf. Sci. 132, 315 (1983).Google Scholar
17. Ho, P.S., Schmid, P.E. and Foll, H., Phys. Rev. Lett. 46, 782 (1981).Google Scholar
18. Galli, G., Thesis, University of Modena, 1982, unpublished.Google Scholar