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Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors

Published online by Cambridge University Press:  20 May 2011

Kee Joo Chang ,
Byungki Ryu ,
Hyeon-Kyun Noh ,
Junhyeok Bang  and
Eun-Ae Choi
Kee Joo Chang
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Byungki Ryu
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Hyeon-Kyun Noh
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Junhyeok Bang
Affiliation:
Department of Physics, Rensselaer Polytechnic Institute, New York, USA
Eun-Ae Choi
Affiliation:
CAE TEAM, Memory Division, Samsung El. Co., Hwasung, Korea
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Abstract

First-principles density functional calculations are performed to investigate the electronic properties of O-vacancy defects in high-k HfO2, Si/HfO2 interface, and amorphous oxide semiconductors. The role of O-vacancy in device performance is discussed by comparing the results of the GGA, hybrid density functional, and quasiparticle energy calculations.

Keywords

oxidedefectselectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy01-01
Copyright
Copyright © Materials Research Society 2011

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