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The Electronic Structure of a-Si,Ge:H Alloys

Published online by Cambridge University Press:  16 February 2011

F. Zhong ,
J.D. Cohen ,
J. Yang  and
S. Guha
F. Zhong
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403
J.D. Cohen
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403
J. Yang
Affiliation:
United Solar Systems Corp., 1100 W. Maple Rd., Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 W. Maple Rd., Troy, MI 48084
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Abstract

We have carried out a detailed study of the energy distribution of deep defects for high quality glow discharge a-Si,Ge:H alloys using both thermal emission and optical Methods: drive-level capacitance profiling, transient photocapacitance and photocurrent plus modulation photocurrent spectroscopy. Four distinct bands of transitions involving defect states have been identified: two associated with thermal transitions, and the other two related to optical transitions. We have, for the first time, observed a negative signal in the photocapacitance spectra at photon energies near 1.2eV. This striking aspect verifies the presence of a distinct defect band above Ep from which electron thermal emission is greatly suppressed. Our Measurements also disclose a fairly narrow defect band below the Fermi level which contrasts with the defect properties observed in a-Si:H. Time resolved photocapacitance spectra indicate that this defect band exhibits configuration relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 493
Copyright
Copyright © Materials Research Society 1994

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References

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