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Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide

Published online by Cambridge University Press:  17 March 2011

M. S. Miao  and
Walter R. L. Lambrecht
M. S. Miao
Affiliation:
Department of Phyiscs, Case Western Reserve University, Cleveland, OH 44106-7079
Walter R. L. Lambrecht
Affiliation:
Department of Phyiscs, Case Western Reserve University, Cleveland, OH 44106-7079
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Abstract

The magnetic properties of cubic (3C) silicon carbide (SiC) doped by first row transition metals (TM) are studied within the local spin density functional approach using the linearized muffin-tin orbital (LMTO) method in the atomic sphere approximation (ASA). The magnetic properties are found to depend strongly on the doping site. For the preferred doping site (Si), Cr and Mn exhibit the most pronounced magnetic behavior with Cr favoring ferromagnetic coupling and Mn antiferromagnetic coupling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F6.8
Copyright
Copyright © Materials Research Society 2002

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References

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