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The Electronic States and Dynamical Properties of Hydrogen Bound to Carbon in Silicon

Published online by Cambridge University Press:  03 September 2012

Yoichi Kamiura ,
Fumio Hashimoto  and
Minoru Yoneta
Yoichi Kamiura
Affiliation:
Faculty of Engineering, Okayama University, Tsushimanaka 3–1–1, Okayama 700, Japan
Fumio Hashimoto
Affiliation:
Faculty of Engineering, Okayama University, Tsushimanaka 3–1–1, Okayama 700, Japan
Minoru Yoneta
Affiliation:
Faculty of Science, Okayama University of Science, Ridaicliou 1–1, Okayama 700, Japan
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Abstract

This paper demonstrates a unique action of hydrogen on defects and impurities in semiconductors. Hydrogen injected into n-type Si by chemical etching or hydrogen plasma not only pas-sivatcs phosphorus but also electrically activates carbon by forming a H-C complex acting as an electron trap E3 (0.15). A model of the structure and electronic state of the H-C complex is proposed on the basis of available experimental data on the properties of the complex. The diffusion coefficient of isolated hydrogen below 300K is evaluated from its diffusion process to phosphorus after the photoinduccd dissociation of the H-C complex. Some differences in hydrogen diffusion between chemically etched and plasma hydrogenated crystals arc discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 455
Copyright
Copyright © Materials Research Society 1992

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References

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