Article contents
The Electronic Properties of Silicon-Silicide Epitaxial Interfaces
Published online by Cambridge University Press: 26 February 2011
Abstract
The selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computed for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the siliconsilicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1988
References
REFERENCES
- 2
- Cited by