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Electronic Properties Of Nanocrystalline Silicon Deposited With Different Crystallite Fractions And Growth Rates

Published online by Cambridge University Press:  01 February 2011

Peter G. Hugger ,
J. David Cohen ,
Baojie Yan ,
Guozhen Yue ,
Xixiang Xu ,
Jeffrey Yang  and
Subhendu Guha
Peter G. Hugger
Affiliation:
[email protected], University of Oregon, Physics, Materials Science Institute, 1252 University of Oregon, Eugene, OR, 97405, United States
J. David Cohen
Affiliation:
[email protected], University of Oregon, Department of Physics, Eugene, OR, 97405, United States
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic, LLC, Troy, MI, 48084, United States
Guozhen Yue
Affiliation:
[email protected], United Solar Ovonic, LLC, Troy, MI, 48084, United States
Xixiang Xu
Affiliation:
[email protected], United Solar Ovonic, LLC, Troy, MI, 48084, United States
Jeffrey Yang
Affiliation:
[email protected], United Solar Ovonic, LLC, Troy, MI, 48084, United States
Subhendu Guha
Affiliation:
[email protected], United Solar Ovonic, LLC, Troy, MI, 48084, United States
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Abstract

Junction capacitance measurements were used to characterize the properties of nanocrystalline silicon (nc-Si:H) solar cells. These methods included drive-level capacitance profiling (DLCP) to obtain spatially-resolved defect densities, as well as transient photocapacitance (TPC) and transient photocurrent (TPI) spectra to reveal optically responsive states in the band-gap, and to estimate minority carrier behavior before and after lightsoaking. Crystalline volume fractions were estimated using Raman spectroscopy. Previously we had identified at least two types of distinct behaviors in such nc-Si:H materials that depended on the crystalline volume fraction. Here, in one case, we report results indicating that both types of behavior can occur in a single sample, possibly indicating that the structural properties of that sample have evolved during growth.

Keywords

thin filmphotovoltaicSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A06-06
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Michelson, C.E. Gelatos, A.V. and Cohen, J.D. Applied Physics Letters 47, 4 (1985).Google Scholar
2. Heath, J.T. Cohen, J.D. and Shafarman, W.N. Journal of Applied Physics 95, 3 (2004).Google Scholar
3. Gelatos, A.V. et al. , Applied Physics Letters 53, 5 (1988).Google Scholar
4. Cohen, J.D. Heath, J.T. and Shafarman, W.N. “Photocapacitance Spectroscopy in Copper Indium Diselenide Alloys”, in Wide-Gap Chalcopyrites, ed. Siebentritt, S. and Rau, U.. 2006, Springer: Berlin. p. 69–87.Google Scholar
5. Bustarret, E. Hachicha, M.A. and Brunel, M. Applied Physics Letters 52, 20 (1988).Google Scholar
6. Han, D. and Lorentzen, J.D. Journal of Applied Physics 94, 5 (2003).Google Scholar
7. Hugger, P.G. et al. , Journal of Non-Crystalline Solids doi:10.1016/j.jnoncrysol.2007.09.088 (2008). (in press)Google Scholar
8. Halverson, A. Gutierrez, J.J. and Cohen, J.D. Appl. Phys. Lett. 88, 071920 (2006).Google Scholar
9. Hugger, P.G. et al. Electronic Characterization and Light-Induced Degradation in nc-Si:H Solar Cells. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology. – 2006, edited by Wagner, S., Chu, V., Harry, J. Atwater, A., Yamamoto, K. and Zan, H.W. (Mater. Res. Soc. Symp. Proc. 910, San Francisco, CA, 2006), 0910-A01-05.Google Scholar