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Electronic Properties of Diamond/Nickel and Diamond/Boron Nitride Interfaces

Published online by Cambridge University Press:  26 February 2011

Warren E. Pickett  and
Steven C. Erwin
Warren E. Pickett
Affiliation:
Complex Systems Theory Branch, Code 4692, Naval Research Laboratory, Washington, DC 20375–5000
Steven C. Erwin
Affiliation:
NRC-NRL Postdoctoral Fellow
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Abstract

We present self-consistent local density functional calculations of the electronic structure and bonding characteristics of an ideal diamond/Ni (001) interface and an unrelaxed diamond/BN (110) interface. At this stage the small lattice mismatches are not taken into account. Results include predictions of the band line-ups across the interfaces: the Schottky barrier height in the former case and the valence and conduction band discontinuities in the latter case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 35
Copyright
Copyright © Materials Research Society 1990

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References

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