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Electronic Properties of Diamond/Nickel and Diamond/Boron Nitride Interfaces
Published online by Cambridge University Press: 26 February 2011
Abstract
We present self-consistent local density functional calculations of the electronic structure and bonding characteristics of an ideal diamond/Ni (001) interface and an unrelaxed diamond/BN (110) interface. At this stage the small lattice mismatches are not taken into account. Results include predictions of the band line-ups across the interfaces: the Schottky barrier height in the former case and the valence and conduction band discontinuities in the latter case.
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- Copyright © Materials Research Society 1990
References
REFERENCES
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Rudder, R. A., Posthill, J. B., Hudson, G. C., Mantini, M. J., and Markunas, R. J., in Diamond Optics, SPIE Vol. 969, edited by Feldman, A. and Holly, S. (SPIE, Bellingham, WA, 1989), 72.Google Scholar
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