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Electronic Properties Of Defects Formed In n-Si During Sputter-Etching In An Ar Plasma

Published online by Cambridge University Press:  15 February 2011

P. N. K. Deenapanray ,
F. D. Auret ,
C. Schutte ,
G. Myburg ,
W. E. Meyer ,
J. B. Malherbe  and
M. C. Ridgway
P. N. K. Deenapanray
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
F. D. Auret
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
C. Schutte
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
G. Myburg
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
W. E. Meyer
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
J. B. Malherbe
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, [email protected]
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 2601
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Abstract

We have employed current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) techniques to characterise the defects induced in n-Si during RF sputter-etching in an Ar plasma. The reverse leakage current, at a bias of 1 V, of the Schottky barrier diodes fabricated on the etched samples was found to decrease with etch time reaching a minimum at 6 minutes and thereafter increased. The barrier heights followed the opposite trend. The plasma processing introduced six prominent deep levels below the conduction band of the substrate. A comparison with the defects induced during high energy (MeV) alpha-particle, proton and electron irradiation of the same material revealed that plasma-etching created the VO- and VP-centres, and V2-10. Some of the remaining sputter-etching-induced (SEI) defects have tentatively been related to those formed during either 1 keV He- or Ar-ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 87
Copyright
Copyright © Materials Research Society 1997

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