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Electronic Properties of a-SiNx:H Thin Film Diodes

Published online by Cambridge University Press:  01 January 1993

J.M. Shannon ,
J.N. Sandoe ,
I.D. French  and
A.D. Annis
J.M. Shannon
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill , Surrey RH1 5HA , United Kingdom
J.N. Sandoe
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill , Surrey RH1 5HA , United Kingdom
I.D. French
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill , Surrey RH1 5HA , United Kingdom
A.D. Annis
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill , Surrey RH1 5HA , United Kingdom
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Abstract

Metal-semiconductor-metal diodes have been fabricated using a range of dilute a - SiNx:H alloys. Current transport in unstressed devices was dominated by thermionic-field emission of electrons through the reverse biassed metal-semiconductor contacts with a tunnelling effective mass ≈0.1me. The barriers to electrons were strongly pinned by bulk states and scaled almost linearly with optical band gap.

Under high current stress, defect states were created below the Fermi level forming a -ve charge that changed the effective barrier height and produced drift in the current voltage characteristic. Unipolar stress measurements showed that this effect was related to hole transport. After prolonged stress the electrical characteristics were dominated by bulk effects due to the high density of metastable defects in the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 987
Copyright
Copyright © Materials Research Society 1993

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References

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