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Electronic Memory Effects in Zinc Oxide Nanoparticle -Polystyrene Devices with a Calcium Top Electrode

Published online by Cambridge University Press:  26 February 2011

Frank Verbakel ,
Stefan C. J. Meskers  and
René A. J. Janssen
Frank Verbakel
Affiliation:
[email protected], Eindhoven University of Technology, Molecular Materials and Nanosystems, P.O. Box 513, Eindhoven, 5600 MB, Netherlands, +31402475783
Stefan C. J. Meskers
Affiliation:
[email protected], Eindhoven University of Technology, Molecular Materials and Nanosystems, P.O. Box 513, Eindhoven, 5600 MB, Netherlands
René A. J. Janssen
Affiliation:
[email protected], Eindhoven University of Technology, Molecular Materials and Nanosystems, P.O. Box 513, Eindhoven, 5600 MB, Netherlands
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Abstract

Diodes with an active layer of solution processed zinc oxide (ZnO) nanoparticles and polystyrene are studied. Poly(3,4-ethylenedioxythiophene)- polystyrenesulfonate (PEDOT:PSS) on indium doped tin oxide (ITO) is used as the bottom electrode and aluminum or calcium are used as top electrode. Pristine devices show diode behavior in their current-voltage characteristics. The conductivity of the device in reverse bias can be raised three orders of magnitude by applying a positive voltage or by illumination with UV light. In this high conductivity state we observe reversible electronic memory effects. The electronic memory effects are attributed to a reversible electrochemical process at the PEDOT:PSS/ZnO interface. Memory effects in diodes with Al and Ca metal electrode are found to be very similar, consistent with the view that the memory effects arise at the PEDOT:PSS/ZnO interface.

Keywords

memoryZnpolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S09-11
Copyright
Copyright © Materials Research Society 2007

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