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Electronic Mechanisms of Excitation of Rare-Earth Luminescence in Silicon

Published online by Cambridge University Press:  15 February 2011

I. N. Yassievich
I. N. Yassievich*
Affiliation:
A.F. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, USSR
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Abstract

Two ways of electronic excitation for f-electron system of rare-earth ions in silicon are considered: impact excitation and Auger excitation. The probabilities of these processes are calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 101
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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