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Electronic Device Fabrication Using Electron Cyclotron Resonance Etching of Boron Doped Homoepitaxial Diamond Films

Published online by Cambridge University Press:  25 February 2011

S.A. Grot ,
R.A. Ditizio ,
G.SH. Gildenblat ,
A.R. Badzian  and
S.J. Fonash
S.A. Grot
Affiliation:
center for Electronic Materials and Processing Department of Electrical and Computer Engineering
R.A. Ditizio
Affiliation:
center for Electronic Materials and Processing Department of Engineering Science and Mechanics
G.SH. Gildenblat
Affiliation:
center for Electronic Materials and Processing Department of Electrical and Computer Engineering
A.R. Badzian
Affiliation:
Materials Research Laboratory The Penn State University, University Park, PA 16802
S.J. Fonash
Affiliation:
center for Electronic Materials and Processing Department of Engineering Science and Mechanics
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Abstract

We describe the applicability of oxygen based Electron Cyclotron Resonance (ECR) etching of diamond for the purpose of fabricating electronic test structures and recessed gate field effect transistors. Boron doped homoepitaxial diamond films grown in a microwave assisted CVD reactor were used for this study. Etch rates from 8 nm/min up to 0.5 μm/min. were achieved depending on etch parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 145
Copyright
Copyright © Materials Research Society 1992

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References

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