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Electronic Defects in Transient, Thermally Processed Semiconductors

Published online by Cambridge University Press:  25 February 2011

N.M. Johnson
N.M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

This paper summarizes the general observations that may be drawn from numerous studies of electronic defects in transient thermally annealed bulk single – crystal silicon and discusses the emerging subjects of electronic defect evaluation in beam – crystallized silicon thin films and in epitaxially – grown III – V semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 265
Copyright
Copyright © Materials Research Society 1985

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References

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