Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-06T11:46:51.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Defects in Metalorganic GaAIAs

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson ,
R. D. Burnham ,
D. Fekete  and
R. D. Yingling
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
R. D. Burnham
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
D. Fekete
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Centers, Palo Alto, California 94304
Get access

Abstract

Electronic defect levels have been measured in n-type epitaxial films of Gal - XAIXAs (0≤X≤0.33) which were grown by metalorganic chemical vapor deposition. Electron traps were characterized by transient capacitance spectroscopy on Schottky-barrier diodes. The thermal activation energy for electron emission from the near-midgap defect level is found to be larger in Ga1 - XAIXAs than the value of 0.83 eV generally observed in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 481
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dupuis, R. D. and Dapkus, P. D., IEEE J. Quantum Electron. QE–15, 128 (1979).Google Scholar
2. Martin, G. M., Mitonneau, A., and Mircea, A., Electron. Letters 13, 191 (1977).Google Scholar
3. Hasegawa, F. and Majerfeld, A., Electron Letters 11, 286 (1975).CrossRefGoogle Scholar
4. Lang, D. V. and Logan, R. A., J. Electron. Mat. 4, 1053 (1975).Google Scholar
5. Mircea, A. and Mitonnau, A., Appl. Phys. 8, 15 (1975).Google Scholar
6. Bhattacharya, P.K., Ku, J. W., Owen, S. J. T., Aebi, V., Cooper, C. B. III, and Moon, R. L., Appl. Phys. Letters 36, 304 (1980).Google Scholar
7. Wagner, E. E., Mars, D. A., Hom, G., and Stringfellow, G. B., J. Appl. Phys. 51, 5434 (1980).CrossRefGoogle Scholar
8. Casey, H. C. Jr., and Panish, M. B., Heterostructure Lasers, Part A-Fundamental Principles, (Academic, New York, 1978).Google Scholar
9. Stringfellow, G. B. and Hall, H. T. Jr., J. Electron. Mat. 8, 201 (1979).CrossRefGoogle Scholar
10. Burnham, R. D. (unpublished).Google Scholar
11. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
12. Johnson, N. M., Bartelink, D. J., Gold, R. B., and Gibbons, J. F., J. Appl. Phys. 50, 4828 (1979).Google Scholar
13. Miller, G. L., Lang, D. V., and Kimerling, L. C., Annu. Rev. Mater. Sci. 7, 377 (1977).Google Scholar
14. Makram-Ebeid, S. (these proceedings).Google Scholar