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Electronic Characterization of Mercuric Iodide Gamma Ray Spectrometers*

Published online by Cambridge University Press:  21 February 2011

Vernon M. Gerrish
Vernon M. Gerrish*
Affiliation:
EG&G Energy Measurements, Inc., Santa Barbara Operations, Goleta, CA 93117
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Abstract

During the past four years the yield of high-resolution mercuric iodide (HgI2) gamma ray spectrometers produced at EG&G/EM has increased dramatically. Data are presented which demonstrate a strong correlation between starting material and spectrometer performance. Improved spectrometer yields are attributed to the method of HgI2 synthesis and to material purification procedures. Data are also presented which show that spectrometer performance is correlated with hole mobility-lifetime products. In addition, the measurement of Schottky barrier heights on HgI2 spectrometers has been performed using I-V curves and the photoelectric method. Barrier heights near 1.10 eV have been obtained using various contacts and contact deposition methods. These data suggest the pinning of the Fermi level at midgap at the HgI2 surface, probably due to surface states formed prior to contact deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 129
Copyright
Copyright © Materials Research Society 1993

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Footnotes

*

The submitted manuscript has been authored by a contractor of the U.S. Government under Contract No. DE-AC08-88NV10617. Accordingly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for U.S. Government purposes.

References

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