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Electronic Characterization of Dislocations in Rtcvd Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy

Published online by Cambridge University Press:  22 February 2011

P.N. Grillot ,
S.A. Ringel ,
G.P. Watsona ,
E.A. Fitzgerald  and
Y.H. Xie
P.N. Grillot
Affiliation:
Dept. of Electrical Engineering, The Ohio State University, Columbus, OH 43210
S.A. Ringel
Affiliation:
Dept. of Electrical Engineering, The Ohio State University, Columbus, OH 43210
G.P. Watsona
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
E.A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Y.H. Xie
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Carrier trapping and recombination activity have been studied with DLTS and EBIC in RTCVD grown compositionally graded Ge0.3Si0.7/Si heterostructures. DLTS peak height is found to vary with applied bias, and the bias conditions used indicate that at least one peak is present in the homoepitaxial Si buffer layer and perhaps the substrate as well. Variations in EBIC contrast as a function of reverse bias, and DLTS fill pulse experiments both indicate that the DLTS peaks observed are dislocation related. Moreover, the bias dependent decrease in DLTS peak height is observed to occur at different rates for different peaks, indicating a possible connection between certain DLTS peaks and dislocation orientation or type. Activation energies of one electron trapping center and one hole trapping center add up to roughly the expected bandgap in a relaxed GexSi1−x, alloy with x ≦ 0.3, indicating that the electron and hole trapping centers observed with DLTS may, in fact, be associated with the R-G center observed by EBIC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 159
Copyright
Copyright © Materials Research Society 1994

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References

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