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The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

Published online by Cambridge University Press:  26 February 2011

Alan T. Collins
Alan T. Collins*
Affiliation:
Wheatstone Physics Laboratory, King's College London, Strand, London WC2R 2LS, UK.
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Abstract

The electronic and optical properties of diamond are reviewed, with particular emphasis on current research into the production of semiconducting devices. Although many of the properties of diamond seem, at first sight, to be ideally suited to the development of high power microwave and optoelectronic devices, there are also a number of obstacles to be overcome before diamond may be successfully exploited for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Custers, J.F.H., Physica 18, 489 (1952).Google Scholar
2. Huggins, C.M. and Cannon, P., Nature 194, 829 (1962).Google Scholar
3. Strong, H.M. and Chrenko, R.M., J. Phys. Chem. 75, 1835 (1971).Google Scholar
4. Yazu, S., Tsuji, K. and Yoshida, A., European Patent Application 0157393 A2 (1985).Google Scholar
5. Berman, R., in The Properties of Diamond, edited by Field, J.E. (Academic Press, London, 1979), chapter 1.Google Scholar
6. Davis, R.F., Sitar, Z., Williams, B.E., Kong, H.S., Kim, H.J., Palmour, J.W., Edmond, J.A., Ryu, J., Glass, J.T. and Carter, C.H. Jr., Materials Science and Engineering B1, 77 (1988).Google Scholar
7. Collins, A.T. and Lightowlers, E.C., in The Properties of Diamond, edited by Field, J.E. (Academic Press, London, 1979) chapter 3.Google Scholar
8. Dyer, H.B. and Wedepohl, P.T., Proc. Phys. Soc. B 59, 410 (1956).Google Scholar
9. Bell, M.D. and Leivo, W.J., Bull. Amer. Phys. Soc. 1, 382 (1956).Google Scholar
10. Woods, R. and Woods, J., Phys. Rev. 105, 921 (1957).Google Scholar
11. Rand, S.C. and DeShazer, L.G., Opt. Letters 10, 481 (1985).Google Scholar
12. Rand, S.C. in Tunable Solid-State Lasers II, edited by Budgor, A.B., Esterowitz, L. and DeShazer, L.G. (Springer Series in Optical Sciences 52), p. 276 (1986).Google Scholar
13. Brown, A.S., Aerospace Am. 25 (11), 12 (1987).Google Scholar
14. Yoder, M.N., Nay. Res. Rev. (NARRA) 39 (2), 27 (1987).Google Scholar
15. Simpson, M., New Scientist 117 (1603), 50 (1988).Google Scholar
16. Manz, B., Microwaves & RF, May 1988, p. 37.Google Scholar
17. Seitz, R., presented at Diamond and DLC Coatings, Marco Island, Florida, October 1989.Google Scholar
18. Smith, R.A. Semiconductors (Cambridge University Press 1959).Google Scholar
19. Vermeulen, L.A. and Farrer, R.G., Diamond Research 1975, 18 (1975).Google Scholar
20. Woods, G.S., Proc. R. Soc. A 470, 219 (1986).Google Scholar
21. Denham, P., Lightowlers, E.C. and Dean, P.J., Phys. Rev. 161, 762 (1967).Google Scholar
22. Davies, G., Chem. Phys. Carbon 13, 1 (1977).Google Scholar
23. Collins, A.T., Kamo, M. and Sato, Y., This Conference, paper F2.7.Google Scholar
24. Bundy, F.P., Strong, H.M. and Wentorf, R.H., Chem. Phys. Carbon 10, 213 (1973).Google Scholar
25. Rotner, S.M., Rotner, Yu. M., Krischuck, G.V., Khrakovskaya, E.M., Stepanova, N.S. and Laptev, V.A., Sov. Phys. Semiconductors 17, 128 (1983).Google Scholar
26. Fujimori, N., New Diamond 2, 10 (1986).Google Scholar
27. Fujimori, N., Imai, T. and Doi, A., Vacuum 36, 99 (1986).Google Scholar
28. Kamo, M., Yurimoto, H., Sato, Y. and Setaka, N., J. Vac. Sci. Technol. A 6, 1818 (1988).Google Scholar
29. Okano, K., Naruki, H., Akiba, Y., Kurosu, T., Iida, M. and Hirose, Y., Japan. J. Appl. Phys. 27, L173 (1988).Google Scholar
30. Williams, A.W.S., Lightowlers, E.C. and Collins, A.T., J. Phys. C 3, 1727 (1970).Google Scholar
31. Grot, S.A., Gildenblat, G.Sh., Hatfield, C.W., Wronski, C.R., Badzian, A.R., Badzian, T. and Messier, R., Electron. Devices Letters, at press, (1989).Google Scholar
32. Williams, A.W.S., PhD thesis, London University, 1970.Google Scholar
33. Yazu, S. (personal communication).Google Scholar
34. Vavilov, V.s., Gukasyan, M.A., Guseva, M.I., Karatygina, T.A. and Konorova, E.A., Soy. Phys. Semicond. 8, 471 (1974).Google Scholar
35. Wedepohl, P.T., Proc. Phys. Soc. 70B, 177 (1957).Google Scholar
36. Collins, A.T., Semicond. Sci. Technol. 4, 605 (1989).Google Scholar
37. Bate, R.T. and Willardson, R.K., Proc. Phys. Soc. 74, 363 (1959).Google Scholar
38. Glover, G.H., Solid-State Electron. 16, 973 (1973).Google Scholar
39. Lightowlers, E.C. and Collins, A.T.,J. Phys. D 9, 951 (1976).Google Scholar
40. Prins, J.F., Appl. Phys. Lett. 41, 950 (1982).Google Scholar
41. Prins, J.F., presented at the 1987 Diamond Conference (unpublished).Google Scholar
42. Tzeng, Y., Lin, T.H., Davidson, J.L. and Lan, L.S., Proceedings of the Seventh biennial university / government / industry microelectronics symposium, Rochester New York (IEEE 1987).Google Scholar
43. Bazhenkov, V.K., Vikulin, I.M. and Gontar, A.G., Sov. Phys. Semicond. 19, 829 (1985).Google Scholar
44. Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A. and Lindley, W.T., IEEE Electron Device Letters 8 341 (1987).Google Scholar
45. Dean, P.J., Kennedy, P.J. and Ralph, J.E., Proc. Phys. Soc. 76, 670 (1960).Google Scholar
46. Dean, P.J. and Male, J.C., J. Phys. Chem. Solids 25, 1369 (1964).Google Scholar
47. Prior, J.R. and Champion, F.C., Proc. Phys. Soc. 80, 849 (1962).Google Scholar
48. Kawarada, H., Nishimura, K., Ito, T., Suzuki, J., Mar, K., Yokota, Y. and Hiraki, A., Japan J. Appl. Phys. 27, L683 (1988).Google Scholar
49. Kawarada, H., Yokota, Y., Mori, Y., Nishimura, K. and Hiraki, A., J. Appl. Phys., in press, I December 1989.Google Scholar
50. Ditchburn, R.W., Light, 3rd ed. (Academic Press, London 1976).Google Scholar
51. Dean, P.J., Phys. Rev. A 139, 588 (1965).Google Scholar
52. Rodgers, G.B. and Raal, F.A., Rev. Sci. Instrum. 31, 663 (1960).Google Scholar
53. Vermeulen, L.A. and Harris, A.J., Diamond Research 1977, p. 25.Google Scholar
54. Vermeulen, L.A. and Harris, A.J., J. Appl. Phys. 49, 913 (1978).Google Scholar
55. Young, J.F., Vermeulen, L.A. and van Driel H M, H.M., Proc. Int. Conf. Lasers 1981, 110 (1981).Google Scholar
56. P-Ho, T. and Lee, C.H., Optics Comm. 46, 202 (1983).Google Scholar
57. Keddy, R.J., Nam, T.L. and Burns, R.C., Phys. Med. Biol. 32, 751 (1987).Google Scholar
58. van Enckevort, W.J.P. and Seal, M., presented at the 1988 Diamond Conference (unpublished).Google Scholar
59. Nakahata, H., Shiomi, H., Imai, T., Nishibayashi, Y. and Fujimori, N., presented at the First Int. Conf. on the New Diamond Science and Technology, Tokyo 1988 (to be published).Google Scholar
60. Geis, M.W., Rathman, D.D., Zayhowski, J.J., Smyth, D., Smith, D.K. and Ditmer, G.A., Third Annual ONR Diamond Technology Initiative Symposium Abstracts, Crystal City VA, 1988, p. 115.Google Scholar
61. Gildenblat, G.Sh., Grot, S.A., Wronski, C.R., Badzian, A.R., Badzian, T. and Messier, R., Appl. Phys. Lett. 53, 586 (1988).Google Scholar
62. Kawarada, H., Yokota, Y., Mori, Y., Nishimura, K., Ito, T., Suzuki, J., Mar, K.-S. Wei, J. and Hiraki, A., SPIE 1055, 162 (1989).Google Scholar
63. Sze, S.M., Physics of Semiconductor Devices, 2nd ed., (Wiley, New York, 1981), section 6.4.2.Google Scholar