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Electronic and Optical Properties of A—(Si, Ge):H Alloys

Published online by Cambridge University Press:  28 February 2011

Vikram Daial ,
James F. Booker  and
Mark Leonard
Vikram Daial
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
James F. Booker
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
Mark Leonard
Affiliation:
Spire Corporation Patriots Park Bedford, MA 01730
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Abstract

We describe the preparation and electronic and optical properties of amorphous (Si, Ge) alloys. A—(Si, Ge):H alloys were prepared by glow discharge decomposition of SiH4 and GeH4. The bandgap was varied between 1.78 and 1.42 eV by changing the GeH4:SiH4 ratio in the gas phase. We find a distinct influence of growth temperature on electronic properties. Films grown at low temperatures (200–250C) tendto have much lower photo conductivity than films grown at higher temperatures (300–325C). The electron (μ τ) products of high temperature films are general> 1X10–7 cm2/V. We also obtain very sharp valence band tails in a—(Si, Ge):H alloys, with slopes of ∼ 40 meV. The hole (μ τ) product is generally ∼1–2X10–8 cm2/V. All these properties suffer a catastrophic decline when bandgap is reduced below about 1.5 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 145
Copyright
Copyright © Materials Research Society 1985

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