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Electron Transport Properties of La1-xSrxTiO3 Under Hydrostatic Pressure

Published online by Cambridge University Press:  10 February 2011

Charles C. Hays ,
Jianshi Zhou ,
John B. Goodenough  and
John T. Markert
Charles C. Hays
Affiliation:
Center for Materials Sci. & Engr., ETC 9. 102, University of Texas at Austin, TX 78712.
Jianshi Zhou
Affiliation:
Center for Materials Sci. & Engr., ETC 9. 102, University of Texas at Austin, TX 78712.
John B. Goodenough
Affiliation:
Center for Materials Sci. & Engr., ETC 9. 102, University of Texas at Austin, TX 78712.
John T. Markert
Affiliation:
Center for Materials Sci. & Engr., ETC 9. 102, University of Texas at Austin, TX 78712.
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Abstract

The temperature dependence of the resistance and thermoelectric power under hydrostatic pressure between 10 and 300 K are reported for two compositions, x = 0.044 and x = 0.05, of the narrowband system La1-xSrxTiO3. The application of hydrostatic pressure at room temperature induces a transition from a positive p-type to a negative n-type thermoelectric power for x = 0.044. This behavior is interpreted within a model of itinerant-electron antiferromagnetism in LaTiO3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 213
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Greedan, J.E., J. Magn. Mater. 44, 299 (1984);Google Scholar
Katsufuji, T., Taguchi, Y., and Tokura, Y., Phys. Rev. B 56, 10145 (1997).Google Scholar
2. Kumagai, K., Suzuki, T., Taguchi, Y., Okada, Y., Fujishima, Y., and Tokura, Y., Phys. Rev. B.48, 7636 (1993)Google Scholar
3. Fujimori, A., Hase, I., Nakamura, M., Namatame, H., Fujishima, Y., Tokura, Y., Abbate, M., deGroot, F. M. F., Czyzyk, M. T., and Fuggle, J. C., Phys. Rev. B 46, 9841 (1992).Google Scholar
4. Zhou, J.-S. and Goodenough, J. B., Phys. Rev. B 53, R11976 (1996).Google Scholar
5. Okimoto, Y., Katsufuji, T., Okado, Y., Arima, T., and Tokura, Y., Phys. Rev. B 51, 9581 (1995)Google Scholar
6. Zhou, J.-S. and Goodenough, J. B., Phys. Rev. B 56, 3104 (1995).Google Scholar
7. Bianconi, A., Lusignoli, M., Saini, N.L., Bordet, P., Kvick, Å., and Radaelli, P.G., Phys. Rev. B 54, 4310 (1996).Google Scholar