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Electron Transport Properties of InN

Published online by Cambridge University Press:  01 February 2011

Rebecca E. Jones ,
Henricus C. M. van Genuchten ,
Sonny X. Li ,
Leon Hsu ,
Kin Man Yu ,
Wladek Walukiewicz ,
Joel W. Ager III ,
Eugene E. Haller ,
Hai Lu  and
William J. Schaff
Rebecca E. Jones
Affiliation:
[email protected], University of California-Berkeley, Materials Science, 1 Cyclotron Road, MS 02R200, Berkeley, CA, 94720, United States
Henricus C. M. van Genuchten
Affiliation:
[email protected], Lawrence Berkeley National Laboratory, Materials Sciences Division
Sonny X. Li
Affiliation:
[email protected]
Leon Hsu
Affiliation:
[email protected]
Kin Man Yu
Affiliation:
[email protected]
Wladek Walukiewicz
Affiliation:
[email protected]
Joel W. Ager III
Affiliation:
[email protected]
Eugene E. Haller
Affiliation:
[email protected]
Hai Lu
Affiliation:
[email protected]
William J. Schaff
Affiliation:
[email protected]
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Abstract

High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.

Keywords

annealingelectrical propertiesradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF06-06
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Wu, J., Walukiewicz, W., Li, S. X., Armitage, R., Ho, J. C., Weber, E. R., Haller, E. E., Lu, H., Schaff, W. J., Barcz, A., and Jakiela, R., Appl. Phys. Lett. 84, 2805 (2004).Google Scholar
[2] Walukiewicz, W., Physica B, 302, 123 (2001).CrossRefGoogle Scholar
[3] Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., and Ager, J. W. III, Haller, E. E., Lu, H. and Schaff, W. J., Metzger, W. K., and Kurtz, S., J. Appl. Phys. 94, 6477 (2003).CrossRefGoogle Scholar
[4] Li, S.X., Yu, K.M., Wu, J., Jones, R.E., Walukiewicz, W., Ager, J.W. III, Shan, W., Haller, E.E., Lu, H., and Schaff, W. J., Phys. Rev. B 71 (16), 161201 (2005).CrossRefGoogle Scholar
[5] Jones, R. E., Li, S. X., Hsu, L., Yu, K. M., Walukiewicz, W., Liliental-Weber, Z., Ager, J. W. III, Haller, E. E., Lu, H. and Schaff, W. J., Physica B (accepted for publication).Google Scholar
[6] Lu, H., Schaff, W. J., Eastman, L. F., and Wood, C., Mat. Res. Soc. Symp. Proc. 693, I1.5 (2002).Google Scholar
[7] Kane, E. O., J. Phys. Chem. Sol. 1 249 (1957).CrossRefGoogle Scholar
[8] Zawadzki, W. and Szymanska, W., Phys. Stat. Sol. (b) 45, 415 (1971).CrossRefGoogle Scholar
[9] Davydov, V. Y. and Klochikhin, A. A., Semiconductors 38, 897 (2004).Google Scholar
[10] Inushima, T., Higashiwaki, M., Matsui, T., Phys. Rev. B 68, 235204 (2003).CrossRefGoogle Scholar
[11] Persson, C., Ahuja, R., Ferreira da Silva, A., and Johansson, R., J. Phys.: Condens. Matter 13, 8945 (2001).Google Scholar
[12] http://www.srim.org/ Google Scholar
[13] Denlinger, J. et al. , unpublished.Google Scholar
[14] Stampfl, C., Van de Walle, C. G., Vogel, D., Kruger, P., and Pollman, J., Phys. Rev. B 61, R7846 (2000).CrossRefGoogle Scholar