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Electron transport in AlN under high electric fields

Published online by Cambridge University Press:  21 March 2011

Ramón Collazo
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-7919
Raoul Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-7919
Amy Roskowski
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-7919
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-7919
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-7919
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Abstract

The energy distribution of electrons transported through an intrinsic AlN film was directly measured as a function of the applied field, and AlN film thickness. Following the transport, electrons were extracted into vacuum through a semitransparent Au electrode and their energy distribution was measured using an electron spectrometer. Transport through films thicker than 95 nm and applied field between 200 kV/cm -350 kV/cm occurred as steady-state hot electron transport represented by a Maxwellian energy distribution, with a corresponding carrier temperature. At higher fields (470 kV/cm), intervalley scattering was evidenced by a multi-component energy distribution with a second peak at the energy position of the first satellite valley. Electron transport through films thinner than 95 nm demonstrated velocity overshoot under fields greater than 550 kV/cm. This was evidenced by a symmetric energy distribution centered at an energy above the conduction band minimum. This indicated that the drift component of the electron velocity was on the order of the “thermal” component. A transient length of less than 80 nm was deduced from these observations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1 Fitting, H. J., Müller, G. O., Mach, R., Reinsperger, G. U., Hingst, Th., and Schreiber, E., Phys. Status Solidi A 121, 305 (1990).Google Scholar
2 Fitting, H. J., Hingst, Th., Schreiber, E., and Geib, E., J. Vac. Sci. Technol. B 14, 2087 (1996).Google Scholar
3 Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., and Sitar, Z., J. Appl. Phys. 88, 10 (2000).Google Scholar
4 King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., and Nemanich, R. J., J. Appl. Phys. 84, 2086 (1998).10.1063/1.368355Google Scholar
5 Lambrecht, W. R. L. and Segall, B., in Properties of Group III Nitrides, No. 11 EMIS Datareviews Series, edited by Edgar, J. H. (Inspec, London, 1994), Chapter 4.Google Scholar
6 Reggiani, L., in Topics in Applied Physics: Hot-Electron Transport in Semiconductors, 1st edition, edited by Reggiani, L. (Springer-Verlag, Berlin, 1985), Vol. 58 10.1007/3-540-13321-6Google Scholar