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Electron Structure and Mechanism of Excitation of the Rare-Earth ions in the III-V Semiconductors

Published online by Cambridge University Press:  21 February 2011

Vadim F. Masterov
Vadim F. Masterov*
Affiliation:
State Technical University, Experimental Physics Departaent, 195251 St. Petersburg, Russia
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Abstract

The review of results of KPR, ODMR, RBS and PL investigations of the III-V semiconductors doped with rare-earth elements is represented. The possible sites of RE related centers in hostare discussed. The possible mechanism of excitation of intrashell f-f transitions is considered. The simple theoretical model of the substitutional RE center in a binary semiconductors is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 373
Copyright
Copyright © Materials Research Society 1993

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References

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