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Electron Stimulated Desorption of Deuterium from GaN (0001) Surface

Published online by Cambridge University Press:  11 February 2011

Y. Yang
Affiliation:
Georgia State University, Atlanta, GA
J. Lee
Affiliation:
Georgia State University, Atlanta, GA
B. D. Thoms
Affiliation:
Georgia State University, Atlanta, GA
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Abstract

Temperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons. TPD of the deuterated surface without electron exposure shows a broad D2 desorption feature with a peak desorption temperature at ∼400 °C. Electron exposure results in a decrease in intensity of the desorption peak which is attributed to removal of surface deuterium by electron stimulated desorption (ESD). This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombinative desorption is first order in deuterium coverage.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Davis, R. F., Proc. IEEE 79, 702 (1991).Google Scholar
[2] Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
[3] Mohammad, S. N., Salvador, A., and Morkoc, H., Proc. IEEE 83, 1306 (1995).Google Scholar
[4] Yu, Z., Buczkowiski, S. L., Gilies, N. C., Myers, T. H. and Richards-Babb, M. R., Appl. Phys. Lett. 69, 2371 (1996).Google Scholar
[5] Okamoto, Y., Hashiguchi, S., Okada, Y. and Kawabe, M., Jpn. J. Appl. Phys., 38, L230 (1990).Google Scholar
[6] Koleske, D. D., Wickenden, A. E., Henry, R. L., Twigg, M. E., Culbertson, J. C. and Gorman, R. J., Appl. Phys. Lett. 73, 2018 (1996).Google Scholar
[7] Han, J., Ng, T.-B., Biefeld, R. M., Crawford, M. H. and Follstaedt, D. M., Appl. Phys. Lett. 71, 3114 (1997).Google Scholar
[8] Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G. and Bedair, S. M., Appl. Phys Lett. 71, 2023 (1997).Google Scholar
[9] Shul, Randy J. in Processing of Wide Band Gap Semiconductors, 263, edited by Pearton, S. J. and Lee, J. W. (Noyes Publications, New York, 2000), p. 263.Google Scholar
[10] Pearton, S. J., Abernathy, C. R., Ren, F., Lothian, J. R., Wisk, P., Katz, A. and Constantine, C., Semicond. Sci. Technol. 8, 310 (1993).Google Scholar
[11] Pearton, S. J. and Lee, J. W., in Semiconductors and Semimetals, Vol. 61, edited by Nickel, N. H., (Academic Press, San Diego, 1999), p. 471.Google Scholar
[12] Nakamura, S., Twasa, N., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
[13] Moustaks, T. D. and Molnar, R., Mater. Res, Soc. Symp. Proc. 281, 753 (1993).Google Scholar
[14] Nakamura, S., Mukai, T., Senoh, M. and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992).Google Scholar
[15] Götz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D. and Haller, E. E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
[16] Clerjaud, B., Côte, D., Lebkiri, A., Naud, C., Baranowski, J. M., Pakula, K., Wasik, D. and Suski, T., Phys. Rev. B 61, 82388241 (2000).Google Scholar
[17] Okamato, Y., Saito, M. and Oshiyama, A., Jpn. J. Appl. Phys., 35, L807 (1996).Google Scholar
[18] Neugerbauer, J. and Van de Walle, C. G., Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
[19] Limpijumnong, S., Northrup, J. E. and Van de Walle, C. G., Phys. Rev. Lett., 87, 205505 (2001).Google Scholar
[20] Wright, A. F., J. Appl. Phys., 90, 1164 (2001).Google Scholar
[21] Wright, A. F., J. Appl. Phys., 90, 6526 (2001).Google Scholar
[22] Chiang, C.-M., Gates, S. M., Bensaoula, A. and Schultz, J. A., Chem. Phys. Lett. 246, 275 (1995).Google Scholar
[23] Shekhar, R. and Jensen, K., Surf. Sci. Lett. 381, L581 (1997).Google Scholar
[24] Bartram, M. E. and Creighton, J. R., MRS Internet J. Nitride Semicond. Res. 4S1, G3.68 (1999).Google Scholar
[25] Bellitto, V. J., Thoms, B. D., Koleske, D. D., Wickenden, A. E. and Henry, R. L., Surf. Sci. 430, 80 (1999).Google Scholar
[26] Bellitto, V. J., Thoms, B. D., Koleske, D. D., Wickenden, A. E. and Henry, R. L., Phys. Rev. B 60, 4816 (1999).Google Scholar
[27] Bellitto, V. J., Yang, Y., Thoms, B. D., Koleske, D. D., Wickenden, A. E., Henry, R. L., Surf. Sci. Lett. 442, L1019 (1999).Google Scholar
[28] Bellitto, V. J., Thoms, B. D., Koleske, D. D., Wickenden, A. E., Henry, R. L., Phys. Rev. B 60, 4821 (1999).Google Scholar
[29] Yang, Y., Lee, J., Thoms, B. D., Koleske, D. D. and Henry, R., Mater. Res. Soc. Symp. Proc., Vol. 693, I6.48.1. Google Scholar
[30] Gillis, H. P., Choutov, D. A., Martin, K. P., Pearton, S. J., and Abernathy, C. R., J. Electrochem. Soc. 143 (1996) L251.Google Scholar
[31] Shul, R. et al., Appl. Phys. Lett. 66 (1995) 1761.Google Scholar
[32] Ping, A. T. and Adesida, I., Appl. Phys. Lett. 67 (1995) 1250.Google Scholar
[33] Pearton, S. J., Mat. Sci. and Engineering. B 44(1997) 1, and references therein.Google Scholar
[34] Becker, R. S., Higashi, G. S., Chabal, Y. J., and Becker, A. J., Phys. Rev. Lett. 65 (1990) 1917.Google Scholar
[35] Boland, J. J., Surf. Sci. 261 (1992) 17.Google Scholar
[36] Lyding, J. W., Shen, T. -C., Hubacek, J. S., Tucker, J. R., and Abeln, G. C., Appl. Phys. Lett. 64 (1994) 15.Google Scholar
[37] Kramer, N., Birk, H., Jorritsma, J., and Schönenberger, C., Appl. Phys. Lett. 66 (1995) 1325.Google Scholar
[38] Mitsui, T., Hill, E., and Ganz, E., J. Appl. Phys. 85 (1999) 522.Google Scholar
[39] Bermudez, V. M., Koleske, D. D., and Wickenden, A. E., Appl. Surf. Sci. 126, 69 (1998).Google Scholar
[40] Wickenden, A. E., Gaskill, D. K., Koleske, D. D., Doverspike, K., Simons, S. D., and Chi, P. H., Res. Mat. Soc. Symp. Proc. 395, 679 (1996).Google Scholar
[41] Lin, J.-L. and Yates, J. T. Jr, J. Vac. Sci. Technol. A, 12(5), 2795 (1994).Google Scholar
[42] Redhead, P. A., Can. J. Phys. 42, 886 (1964).Google Scholar
[43] Bermudez, V. M., J. Appl. Phys. 80, 1190 (1996).Google Scholar
[44] Olson, C. G., Lynch, D. W., and Zehe, A., Phys. Rev. B 24, 4629 (1981).Google Scholar
[45] Berger, A., Troost, D., and Mönch, W., Vacuum 41, 671 (1990).Google Scholar
[46] Troost, D., Baier, H.-U., Berger, A., and Mönch, W., Surf. Sci. 242, 324 (1991).Google Scholar