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Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

Published online by Cambridge University Press:  01 January 1993

T.J. Mc Mahon  and
Y. Xiao
T.J. Mc Mahon
Affiliation:
NREL, Golden, CO 80401, USA.
Y. Xiao
Affiliation:
NREL, Golden, CO 80401, USA. Univ. of Colorado, Boulder, CO 80309.
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Abstract

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Poindexter, E.H. and Caplan, P.J., Prog. in Surface Science, 14, 201 (1983)Google Scholar
2. Brodsky, M.H. and Title, R.S., Phys. Rev. Lett. 23, 581 (1969)Google Scholar
3. Lemke, B.P. and Haneman, D., Phys. Rev. Lett, 35, 1379 (1975)Google Scholar
4. Biegelson, D.K. and Stutzmann, M., Phys. Rev. B33, 3006 (1986)Google Scholar
5. Stathis, J.H., Phys. Rev. B40, 1232 (1989)Google Scholar
6. Stutzmann, M. and Biegelson, D.K., Phys. Rev. B40, 9834 (1989)Google Scholar
7. Brower, K.L., Appl. Phys. Lett, 43, 1111 (1983)Google Scholar
8. Brower, K.L., Phys. Rev. B33, 4471 (1986)Google Scholar
9. Fu, Y. and Fedders, , Solid State Comm. 84, 799 (1992)Google Scholar
10. Moss, S.C. and Graczyk, , Phys. Rev. Lett. 23, 1167 (1969)Google Scholar
11. Brandt, M.S. and Stutzmann, M., Appl. Phys. Lett. 61, 2569 (1992)Google Scholar
12. Poindexter, E.H., Rong, F.C., Harvey, J.F., and Gerardi, G.J., Intrnat’l Workshop on Light Emision and Electronic Properties of Nanoscale Silicon, Charlotte NC. Feb, 1993.Google Scholar
13. Cheung, W.Y., Wong, S.P., Wilson, I.H., Kan, C.F.. and Hark, S.K., Proc. of the Materials Research Society, Fall (1992)Google Scholar
14. Xiao, Y., Heben, M.J., McCullough, J.M., Tsuo, Y.S., Pankove, J.I., and Deb, S.K., Appl. Phys. Lett. 62, 1152 (1993)Google Scholar