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Electron Spin Resonance Studies of Silicon Dioxide Films on Silicon in Integrated Circuits Using Spin Dependent Recombination

Published online by Cambridge University Press:  25 February 2011

M. A. Jupina  and
P. M. Lenahan
M. A. Jupina
Affiliation:
Pennsylvania State University, University Park, PA 16802
P. M. Lenahan
Affiliation:
Pennsylvania State University, University Park, PA 16802
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Abstract

The technique of spin dependent recombination (SDR) allows the electron spin resonance (ESR) observation of electrically-active point defects in a single metal-oxide-semiconductor field-effect transistor (MOSFET) with surface areas of only 10-4 cm2 and Si/Si02 interface point defect densities of ∼1011/cm2. With SDR's enhanced sensitivity, devices with different processing details are explored. Differences in the E' spectra for variations in the oxidation processing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 191
Copyright
Copyright © Materials Research Society 1990

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References

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