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Electron Paramagnetic Resonance Studies of Hf-CVD Diamond Films

Published online by Cambridge University Press:  15 February 2011

B. Ramakrishnan ,
D. J. Keeble ,
H. Rodrigo  and
A. Kulkarni
B. Ramakrishnan
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931.
D. J. Keeble
Affiliation:
Carnegie Laboratory of Physics, Department of APEME, University of Dundee, Dundee, DD 1 4DH, UK.
H. Rodrigo
Affiliation:
Department of Electrical Engineering, Royal Melbourne Institute of Technology, Melbourne, Australia.
A. Kulkarni
Affiliation:
Department of Electrical Engineering, Michigan Technological University, Houghton, MI 49931.
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Abstract

Diamond thin films have been deposited on silicon substrates by hot-filament chemical vapor deposition (HF-CVD). Substrate temperature and methane concentration have been varied and the resulting structural properties of the deposited films studied. Raman spectroscopy, scanning electron microscopy and electron paramagnetic resonance (EPR) measurements were performed. The EPR measurements showed a single spectrum at g = 2.0027(2). The bulk concentration of the paramagnetic species, as determined from the total EPR absorption were found to vary in the range 1017 to 1019 cm−3. Low paramagnetic defect concentrations were found for samples exhibiting a low non-diamond carbon contribution to the Raman spectrum. These samples were those grown with a methane concentration of I % or less.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 501
Copyright
Copyright © Materials Research Society 1996

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