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Electron Paramagnetic Resonance and Optical Study of Radiation-Induced Defect Centers in Doped Silica Glasses

Published online by Cambridge University Press:  25 February 2011

Robert N. Schwartz
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
Gregory L. Tangonan
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
G. Richard Blair
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
Walee Chamulitrat
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77004
Larry Kevan
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77004
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Abstract

Gamma- and UV-induced defect centers in germanium and fluorine doped silica have been studied by electron paramagnetic resonance (EPR) spectroscopy. The complex spectrum at g≃2 in γ-irradiated germanium doped glass corresponds to a superposition of resonances from several germanium E′-centers. In UV-irradiated samples, however, the EPR spectrum is dominated by only one type of germanium E′-centers. Significant spectral simplification of γ-irradiated germanium doped silica can be achieved by heating or broadband photoirradiation. Similar results are observed in multimode germanium doped core optical fibers. UV-induced optical loss spectra in the 0.5–1.5 μm wavelength range were also measured in these core fibers as well as the growth kinetics of the UL-induced absorption. Gamma-irradiation of fluorine doped silica generated two different types of silicon E′-centers, Ea1. At lower radiation dose one sees a mixture of Ea1 and Ea2, but at higher radiation dose Ea2 dominates. A spectrum dominated by the Ea2 variant is also observed in LW-irradiated samples and in photobleached low gamma dose samples.

Type
Articles
Copyright
Copyright © Materials Research Society 1986

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