Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:28:55.677Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Microscopy Studies of Undoped and Phosphorus Doped Si:H and Si,C:H Films

Published online by Cambridge University Press:  01 January 1993

Y.L. Chen ,
J. Bentley ,
C. Wang ,
G. Lucovsky  and
D.M. Maher
Y.L. Chen
Affiliation:
Department of Materials Science and Engineering and Department of Physics, North Carolina State University, Raleigh, NC 27695-7916
J. Bentley
Affiliation:
Metals and Ceramics Division,Oak Ridge National Laboratory, Oak Ridge , TN 37831-6376
C. Wang
Affiliation:
Department of Materials Science and Engineering and Department of Physics, North Carolina State University, Raleigh, NC 27695-7916
G. Lucovsky
Affiliation:
Department of Materials Science and Engineering and Department of Physics, North Carolina State University, Raleigh, NC 27695-7916
D.M. Maher
Affiliation:
Department of Materials Science and Engineering and Department of Physics, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

The microstructure of undoped and phosphorus doped Si:H and Si,C:H films was analyzed by selected-area diffraction, conical dark-field imaging, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy in transmission electron microscopes. Thin films were synthesized by remote plasma-enhanced chemical vapor deposition and characterized in terms of degree of crystallinity. The distribution of phosphorus in the Si:H and Si,C:H films, and carbon in the Si,C:H films was evaluated. The results indicate that i) the microstructure of a film may be two phase, consisting of silicon microcrystallites in an amorphous matrix, ii) phosphorus doping as well as the presence of carbon influences the degree of crystallinity by reducing the average size and volume fraction of microcrystallites, iii) the presence of carbon and phosphorus doping completely suppresses the crystalline phase, iv) phosphorus is distributed at approximately the same concentration in both the crystalline and amorphous phases of diphasic films, and v) carbon is detected in the amorphous phase of the Si,C:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 711
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, C. and Lucovsky, G., Proc. 21st IEEE Photovoltaic Specialists Conference, (IEEE, New York, 1990), Vol. 2, p. 1614.Google Scholar
2. Wang, C., Williams, M.J. and Lucovsky, G., J. Vac. Sci. Technol. A 3, 444 (1991).Google Scholar
3. Shirafuji, J., Mastsui, H., Narakawa, A., and Inuishi, Y., Appl. Phys. Lett. 41, 535 (1982).Google Scholar
4. Turner, W. A., Williams, M. J., Chen, Y. L., Maher, D. M., and Lucovsky, G., in Microcrystalline Semiconductors - Materials Science & Devices, edited by Aoyagi, Y., Canham, L. T., Fauchet, P. M., Shimizu, I., and Tsai, C. C. (Mater. Res. Soc. Proc. 283, Pittsburgh, PA, 1993) pp. 567–572.Google Scholar
5. Usui, S. and Kikuchi, M., J. Non-cryst. Solids 34, 1 (1979).Google Scholar
6. Hamasaki, T., Kurata, H., Hirose, M., and Osaka, Y., Appl. Phys. Lett. 37, 1084 (1980).Google Scholar
7. Spear, W. E., Willeke, G. and LeComber, P. G., and Fitzgerald, A. G., J. de Physique 24, C4-257 (1981).Google Scholar
8. Lucovsky, G. and Wang, C., in Amorphous Silicon Technology - 1991, edited by Madan, A., Hamakawa, Y., Thompson, M. J., Taylor, P. C., and LeComber, P. G. (Mater. Res. Soc. Proc. 219, Pittsburgh, PA, 1991) pp. 377–382.Google Scholar
9. Williams, M. J., Wang, C., and Lucovsky, G., pp. 389–394.Google Scholar
10. Matsuda, A., Yamasaki, S., Nakagawa, K., Okuahi, H., Tanaka, K., Iizima, S., Matsumura, M., and Yamamoto, Y, Jpn. J. Appl. Phys. 19. L305 (1980).Google Scholar
11. Spear, W. E., Willeke, G. and LeComber, P. G., Physica 117B & 118B, 908 (1983).Google Scholar
12. Parson, G. N., Tsu, D. V. and Lucovsky, G., J. Non-cryst. Solids, 97 & 98, 1375 (1987).Google Scholar
13. Prasad, K., Kroll, U., Finger, F., Shah, A., Dorier, J-L., Howling, A., Baumann, J. and Schubert, M., in Amorphous Silicon Technology -1991, edited by Madan, A., Hamakawa, Y., Thompson, M. J., Taylor, P. C., and LeComber, P. G. (Mater. Res. Soc. Proc. 219, Pittsburgh, PA, 1991) pp. 469–474.Google Scholar
14. Lee, D. R., Bjorkman, C. H., Wang, C., and Lucovsky, G., pp. 395–400.Google Scholar
15. Chen, Y. L., Wang, C., Lucovsky, G., Maher, D. M., and Nemanich, R. J., J. Vac. Sci. Technol. A 10, 874 (1992).Google Scholar
16. Cliff, G. and Lorimer, G. W., J. Microscopy 103, 203 (1975).Google Scholar
17. Maher, D. M., Joy, D. C., Ellington, M. B., Zaluzec, N. J., and Mochel, P. M. in Analytical Electron Microscopy 1981, edited by Geiss, R. (San Francisco Press,1981) pp. 33–38.Google Scholar
18. Leapman, R. D. in Transmission Electron Energy Loss Spectometry in Materials Science, edited by Disko, M. M. et al., (The Minerals, Metals, and Materials Society, Warrendale, PA, 1992) p. 47.Google Scholar