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Electron Microscope Characterization of Pulse Annealed Semiconductors

Published online by Cambridge University Press:  15 February 2011

A. G. CULLIS
A. G. CULLIS*
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, England
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Abstract

The pulse processing techniques that have assumed prominence over the past few years offer various important advantages for device fabrication technology. However, the usefulness of each individual method depends substantially upon the specific annealing mechanism involved. This article demonstrates the role of electron microscopy in elucidating such mechanisms and in analysing annealed semiconductor structures of importance to both research workers and semiconductor technologists. The range of laser and electron beam pulse annealing methods is covered and defect structure transitions observed are related to the solid and liquid phase processes occurring. Characteristic impurity trapping and segregation phenomena are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 393
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Khaibullin, I. B., Shtyrkov, E. I., Zaripov, M. M., Galyautdinov, M. F. and Zakirov, G. G., Sov. Phys. Semicond. 11, 190 (1977).Google Scholar
2. Foti, G., Campisano, S. U., Rimini, E. and Vitali, G., J. Appl. Phys. 49, 2569 (1978).Google Scholar
3. Celler, G. K., Poate, J. M. and Kimerling, L. C., Appl. Phys. Lett. 32, 464 (1978).Google Scholar
4. Narayan, J., Young, R. T. and White, C. W., J. Appl. Phys. 49, 3912 (1978).Google Scholar
5. Cullis, A. G., Webber, H. C. and Bailey, P., J. Phys. E: Sci. Instrum. 12, 688 (1979).Google Scholar
6. Tseng, W. F., Mayer, J. W., Campisano, S. U., Foti, G. and Rimini, E., Appl. Phys. Lett. 32, 824 (1978).Google Scholar
7. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
8. Cullis, A. G., Webber, H. C. and Chew, N. G., Appl. Phys. Lett. 36, 547 (1980).CrossRefGoogle Scholar
9. Bagley, B. G. and Chen in, H. S.: Laser Solid Interactions and Laser Processing - 1978, Ferris, S. D., Leamy, H. J., Poate, J. M. (Am. Inst. Phys. New York 1979) pp. 97–102.Google Scholar
10. McMahon, R. A., Ahmed, H. and Cullis, A. G., Appl. Phys. Lett. 37 (1980).Google Scholar
11. Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., Phys. Rev. Lett. 41, 1246 (1978).Google Scholar
12. Cullis, A. G., Poate, J. M. and Celler, in, G. K.: Laser Solid Interactions and Laser Processing - 1978, Ferris, S. D., Leamy, H. J., Poate, J. M. (Am. Inst. Phys., New York 1979) pp. 311–316.Google Scholar
13. Cullis, A. G., Webber, H. C., Poate, J. M. and Chew, N. G., Microsc., J. 118, 41 (1980).Google Scholar
14. Cullis, A. G., Webber, H. C., Poate, J. M. and Simons, A. L., Appl. Phys. Lett. 36, 320 (1980).Google Scholar
15. Bardsley, W., Boulton, J. S. and Hurle, D. T. J., Solid-State Electron. 5, 395 (1962).Google Scholar
16. Cullis, A. G., Hurle, D. T. J., Webber, H. C., Chew, N. G., Poate, J. M., Baeri, P. and Foti, G., Appl. Phys. Lett., in the press.Google Scholar
17. Hurle, D. T. J., Cullis, A. G., Webber, H. C., Poate, J. M., Baeri, P. and Foti, G., to be published.Google Scholar
18. Mullins, W. W. and Sekerka, R. F., J. Appl. Phys. 35, 444 (1964).Google Scholar
19. Jackson, K. A., Gilmer, G. H. and Leamy, H. J., in: Laser and Electron Beam Processing of Materials, White, C. W., Peercy, P. S. eds. (Academic Press, New York 1980) pp. 104–109.Google Scholar
20. White, C. W., Wilson, S. R., Appleton, B. R. and Young, F. W., J. Appl. Phys. 51, 738 (1980).Google Scholar
21. Baeri, P., Poate, J. M., Foti, G., Campisano, S. U., Rimini, E. and Cullis, A. G., Appl. Phys. Lett. 37, (1980).Google Scholar
22. Bean, J. C., Leamy, H. J., Poate, J. M., Rozgonyi, G. A., Sheng, T. T., Williams, J. S. and Celler, G. K., Appl. Phys. Lett. 33, 227 (1978)Google Scholar
23. Tamura, M., Tamura, H. and Tokuyama, T., Jap. J. Appl. Phys. 19, L23 (1980).Google Scholar
24. Leamy, H. J., Rozgonyi, G.A., Sheng, T. T. and Celler, G. K., in: Laser and Electron Beam Processing of Electronic Materials, Anderson, C. L., Celler, G. K. and Rozgonyi, G. A. (Electrochem. Soc., Princeton 1980) pp. 333–343.Google Scholar
25. Hill, C., Godfrey, D. J., Cullis, A. G., Webber, H. C. and Chew, N. G., Appl. Phys. Lett. in the press.Google Scholar
26. Wu, C. P. and Schnable, G. L., RCA Review 40, 339 (1979).Google Scholar
27. Narayan, J. and Young, F. W. Jr., Appl. Phys. Lett. 35, 330 (1979).Google Scholar
28. Poate, J. M., Leamy, H. J., Sheng, T. T. and Celler, G. K., Appl. Phys. Lett. 33, 918 (1978).Google Scholar
29. van Gurp, G. J., Eggermont, E. J., Tamminga, Y., Stacy, W. T. and Gijsbers, J. R. M., Appl. Phys. Lett. 35, 273 (1979).Google Scholar
30. Campisano, S. U., Foti, G., Rimini, E., Eisen, F. H., Tseng, W. F., Nicolet, M–A. and Tandon, J. L., J. Appl. Phys. 51, 295 (1980).Google Scholar
31. Sadana, D. K., Wilson, M. C. and Booker, G. R., Microsc., J. 118, 51 (1980).Google Scholar
32. Kular, S. S., Sealy, B. J., Badawi, M. H., Stephens, K. G., Sadana, D. K. and Booker, G. R., Electron. Lett. 15, 413 (1979).Google Scholar
33. Cullis, A. G., Webber, H. C. and Robertson, D. S., in Laser Solid Interactions and Laser Processing - 1978, Ferris, S. D., Leamy, H. J., Poate, J. M. (Am. Inst. Phys., New York 1979) pp. 653–658.Google Scholar
34. Gat, A. and Gibbons, J. F., Appl. Phys. Lett. 32, 142 (1978).Google Scholar
35. Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Williams, P. and Evans, C. A. Jr. Appl. Phys. Lett. 33, 389 (1978).Google Scholar
36. Williams, J. S., Brown, W. L., Leamy, H. J., Poate, J. M., Rodgers, J. W., Rousseau, D., Rozgonyi, G. A., Shelnutt, J. A. and Sheng, T. T., Appl. Phys. Lett. 33, 542 (1978).Google Scholar
37. Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Deline, V. R., Williams, P. and Evans, C. A. Jr. Appl. Phys. Lett. 32, 276 (1978).Google Scholar
38. Bicknell, R. W. and Allen, R. M., Rad. Effects 6, 45 (1970).Google Scholar
39. Gat, A., Gerzberg, L., Gibbons, J. F., Magee, T. J., Peng, J. and Hong, J. D., Appl. Phys. Lett. 33, 775 (1978).Google Scholar
40. Greenwald, A. C., Kirkpatrick, A. R., Little, R. G. and Minnucci, J. A., J. Appl. Phys. 50, 783 (1979).Google Scholar
41. Baeri, P., Foti, G., Poate, J. M. and Cullis, A. G., Phys. Rev. Lett. in the press.Google Scholar
42. Leas, J. M., Smith, P. J., Nagarajan, A. and Leighton, A., in Laser and Electron Beam Processing of Electronic Materials, Anderson, C. L., Celler, G. K. and Rozgonyi, G. A. (Electrochem. Soc., Princeton 1980) pp. 141–151.Google Scholar
43. McMahon, R. A. and Ahmed, H., Electron. Lett. 15, 2 (1979).Google Scholar
44. Regolini, J. L., Gibbons, J. F., Sigmon, T. W., Pease, R. F. W., Magee, T. J. and Peng, J., Appl. Phys. Lett. 34, 410 (1979).Google Scholar
45. Ratnakumar, K. N., Pease, R. F. W., Bartelink, D. J. and Johnson, N. M., J. Vac. Sci. Technol. 16 (1979).Google Scholar
46. McMahon, R. A. and Ahmed, H., J. Vac. Sci. Technol. 16, 1840 (1979).Google Scholar