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Electron Irradiated InP: A Positron Annihilation Study

Published online by Cambridge University Press:  03 September 2012

T. Bretagnon ,
S. Dannefaer  and
D. Kerr
T. Bretagnon
Affiliation:
Department of Physics, University of Winnipeg R3B 2E9 Winnipeg, MB, Canada.
S. Dannefaer
Affiliation:
Department of Physics, University of Winnipeg R3B 2E9 Winnipeg, MB, Canada.
D. Kerr
Affiliation:
Department of Physics, University of Winnipeg R3B 2E9 Winnipeg, MB, Canada.
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Abstract

Positron lifetime measurements show that electron irradiation produces indium vacancy related defects in InP. Divacancies are also found in semi-insulating and lightly doped p and n-type materials. Temperature investigations show a change in the divacancy charge state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 337
Copyright
Copyright © Materials Research Society 1992

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References

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